Search results for "igbt"

A wide range of MOSFET devices from power semiconductor specialist MagnaChip Semiconductor is now available from Diamond Power Components. Located in South Korea, MagnaChip was spun out of an LG Semiconductor and Hyundai Semiconductor joint venture for power devices. MagnaChip uses its own wafer fabs to produce in excess of 130,000 eight inch wafers per month.

1,200V IGBTs, based on third generation Ultra Field Stop technology have been launched at PCIM by ON Semiconductor. The NGTB40N120FL3WG, NGTB25N120FL3WG and NGTB40N120L3WG are achieve industry-leading total switching loss characteristics, claims the company, due in part to a wide, highly activated field-stop layer and optimised co-pack diode.

This year’s PCIM exhibition introduced a whole host of new power products, technologies and applications. Sally Ward-Foxton reports from Nuremberg.This year’s PCIM (power conversion, intelligent motion) exhibition in Nuremberg brought together 436 exhibitors and more than 10,000 visitors from around the world to share the latest in power products, technologies and applications.

Vincotech has announced the launch of a unique three-level solution for high-voltage solar and ESS applications. The cost-efficient new flowNPC 1 split meets the demands of sophisticated devices by combining two fast modules to improve thermal performance and enable four-quadrant operation.

Infineon Technologies has introduced a discrete 600V TRENCHSTOP Performance IGBT which provides high energy efficiency and reliability at a competitive price point for applications such as air conditioning, PV inverters, drives and UPS. Based on Infineon’s TRENCHSTOP technology, the IGBT is optimised for hard switching topologies working at frequencies of up to 30kHz.

ROHM Semiconductor has introduced an SiC power module rated at 1,200V/180A based on the company’s completely inhouse supply chain capacities and advanced packaging capabilities. The BSM180D12P3C007 half-bridge SiC module integrates mass-produced trench-type SiC MOSFETs and SiC SBDs in the same footprint as previous modules.

To test electric and hybrid vehicle (EV/HEV) power electronics reliably during power cycling, Mentor Graphics Corporation has introduced its latest MicReD Power Tester 600A product. The MicReD Power Tester 600A offering allows EV/HEV development and reliability engineers to test power electronics (such as insulated gate bipolar transistors - IGBTs, MOSFETs, transistors and chargers) for mission critical thermal reliability and lifecycle performan...

Toshiba Electronics Europe has announced an opto-isolated IGBT gate pre-driver IC with enhanced protection functions for the in-vehicle inverters of EVs and HEVs. Inverter control is used to drive the motors of electric and hybrid vehicles efficiently. As the control and drive functions have different operating voltages, they must be isolated from each other with a device such as a photocoupler.

Expanding its growing portfolio of automotive-grade semiconductor solutions for EVs, HEVs and PHEVs, Fairchild has introduced discrete and bare die IGBTs and diodes. These IGBTs and diodes are suited for traction inverters, a core component of all EVs, HEVs and PHEVs that convert the batteries’ electricity from direct current into the three-phase alternating current required by the vehicles’ drive motors.

Power modules from Infineon for hybrid and electric vehicles (H/EVs) meet challenges presented by CO2 regulations to meet targets of 95g CO2 /km in Europe, 121g/km in the US, 117g/km in China and 105g/km in Japan by 2020.The HybridPack Double Sided Cooling (DSC) power modules for H/EVs measure 42 x 42.4 x 4.77mm.