Search results for "igbt"

Hitachi's Power Devices Division has announced two high voltage IGBT modules. The new 3.3KV MBN1000E33E2 and MBN1500E33E2 IGBT modules offer a current rating of 1000 Amp and 1500 Amp respectively. The new modules are manufactured using Hitachi’s new E2 series fine pattern silicon process technology which enables a more cost effective production process, increased current capability and an increase in the active silicon cell area. The use of...

ROHM has recently announced the industry’s first mass production of SiC power modules (1200V/100A rated) comprised entirely of SiC power elements as custom module. Incorporating SiC inverters and converters for power conversion in industrial equipment provides a number of advantages over typical silicon-based IGBT modules such as switching loss reduction by 85%, approximately 50% less volume compared to conventional 400A-class Si IGBT modules a...

In a breakthrough that redefines performance and energy efficiency in high-power applications, Cree announces a new family of 50A Silicon Carbide (SiC) devices, including the industry's first 1700V Z-FETT SiC MOSFET.

Cree, Inc. has expanded its design-in support for the industry's first commercially-available SiC MOSFET power devices with a fully-qualified SPICE model. Using the new SPICE model, circuit designers can easily evaluate the benefits Cree's SiC Z-FETT MOSFETs provide for achieving a higher level of efficiency than is possible with conventional silicon power switching devices for comparably-rated devices.

Cree announces a new family of seven 1200V Z-Rec silicon carbide (SiC) Schottky diodes optimized for price and performance and available in a range of amperages and packages. Cree is advancing the adoption of silicon carbide power devices into mainstream power applications by introducing a comprehensive family of SiC diodes with a wide range of amperage ratings and package options.

Spellman High Voltage Electronics announced the introduction of its new 10kW ST Series of high voltage power supplies. The ST features positive or negative polarity in 18 different models with outputs ranging from 1kV to 120kV. Front panel controls allow for easy local operation, and an analog interface provides comprehensive remote capability.

CISSOID, the leader in high-temperature and high reliability semiconductor solutions, unveils THEMIS and ATLAS, their power transistor driver chipset meant for high efficiency motor drives and power converters. THEMIS and ATLAS are especially designed to drive seamlessly the most advanced power switches, including Silicon Carbide (SiC) MOSFETs and JFETs as well as Silicon IGBTs and MOSFETs. The chipset is the cornerstone of energy-saving, reliabl...