Search results for "igbt"
Rectifier diodes meet wide range of applications
An increased range of HY Electronics rectifier diodes and bridge rectifiers is now available to order from JPR Electronics. The extensive HY product range includes rectifier diodes, bridge rectifiers, Schottky barrier rectifiers, power mosfets, fast recovery Epitaxy diodes, 3-phase rectifiers, transient voltage suppressors, LED driver modules (CLD) and IGBT modules.
All-SiC power module achieves efficiencies over 98%
Wolfspeed, a Cree company, has introduced a high-performance 62mm power module, using the company's second generation SiC to produce all SiC power modules, claimed to enable unprecedented efficiency and power density for converters, inverters, motor drives, industrial electronics and EV systems.
5A gate drive optocouplers features unmatched noise immunity
Broadcom Limited has announced a new generation of 5A gate drive optocoupler devices, the ACPL-352J and ACNW3430, designed for a wide range of industrial applications including motor drives and power inverters. The devices feature superb common mode transient immunity (CMTI) of up to 100kV/μs, preventing erroneous gate driver failures in noisy environments. Both the ACPL-352J and ACNW3430 support up to 5A rail-torail output current, which elim...
Thermal interface materials enabling new applications
While there are obviously similarities, different applications have different key requirements of the TIMs. In all cases, the TIM needs to minimise stress, prevent electromigration of its fillers and maximise adhesion. Thermal Interface Materials 2016-2026 explores in detail the relationship between the form factors and characteristics of different commercial product offerings and their applications, focused on new opportunities and gaps in the m...
MiniSKiiP meets half-bridge in Vincotech's recent line
Vincotech has announced that half-bridge MiniSKiiPDUAL modules have been added to the standard MiniSKiiP product line, thereby extending the power range all the way up to 90kW for 650V and 1200V applications. Equipped with solder-free spring-contact, Vincotech’s MiniSKiiP half-bridge modules can now replace baseplate modules with screwed bus bar connections to drive down inverter package and manufacturing costs by as much as 15%.
‘Protect. Control. Sense’ at PCIM 2016
At PCIM Europe 2016 in Nuremberg from 10th to 12th May 2016, Littelfuse will be unveiling families of SiC Schottky diodes and silicon IGBTs in Booth 7-140. An in-booth demonstration will illustrate the capabilities of Monolith’s SiC MOSFET technology with a 5kW buck converter with 675V nominal input and 350V nominal output. The converter switches at high frequencies around 200kHz with an efficiency over 98% that cannot be achieved with sili...
MOSFETs offer flexibility to increase efficiency & frequency
Infineon Technologies announces SiC MOSFET technology which allows product designs to achieve previously unattainable levels of power density and performance. Infineon’s CoolSiC MOSFETs offer a new degree of flexibility for increasing efficiency and frequency. They will help developers of power conversion schemes to save space and weight, reduce cooling requirements, improve reliability and lower system costs.
SiC power devices accelerate automotive electrification
STMicroelectronics has announced advanced high-efficiency power semiconductors for EVs & HEVs with a timetable for qualification to the AEC-Q101 automotive standard. In EVs and HEVs, where better electrical efficiency means greater mileage, ST’s latest SiC technology enables auto makers to create vehicles that travel further, recharge faster and fit better into owners’ lives.
Drivers for 1,200V applications offer up to 8A output
A joint development at Power Integrations has resulted in the Scale-iDriver ICs, using FluxLink from the low voltage team and the high voltage team’s expertise in soft shutdown.
2W DC/DC converters designed to power SiC MOSFETs
To meet the tough requirements of next-gen MOSFETs, RECOM has introduced two 2W DC/DC converter series designed to power SiC MOSFETs. One of the challenges of driving SiC MOSFETs is the high frequency and high voltage at which they are switched. High potentials between the control and power side of a SiC MOSFET application can wear down isolation barriers, eventually causing them to fail.