Search results for "igbt"

“2015 was an important year for power electronics industry”, announces Yole, the 'More than Moore' market research and strategy consulting company. Indeed 2015 corresponds to the beginning of ASP strong erosion due to the high production volume.

Suited for driving high and low-side gate circuits such as those using IGBTs and SiC MOSFETs for optimal efficiency, a series of 1W DC/DC converter series has been announced by Murata Power Solutions. The compact MGJ1 series features high isolation characteristics, up to 5.2kVDC, popular nominal output voltage combinations of +15 / -5, +15 / -9 or +19 / -5VDC. The series also offers a choice of +5, +12 or +24VDC input.

Solid State Supplies says it has positioned itself as the prominent source in the UK for the latest technology from Microsemi, as the semiconductor manufacturer further strengthens its supply chain by closer cooperation with key channel partners. The strategy will see the UK market served more effectively.

According to IC Insights, greater demand for energy efficiency in systems, cars, portable electronics and new connections to the IoT will steadily drive power transistor sales to new record-high levels in the next three years.

Infineon's new 650V Rapid 1 and Rapid 2 hyperfast diodes (IDP_, IDV_ and IDW_ series) are the perfect partners for CoolMOS™ MOSFETs or such discrete IGBTs as Infineon's Trenchstop™ 5. They offer outstanding value for money in AC/DC topologies like PFC, as well as for use as free-wheeling diodes in DC/DC topologies.

The 8th June 2016 saw the University of Nottingham’s (UoN) electric superbike become the fastest university-developed electric bike to go around the 37 mile Isle of Man road circuit winning 3rd place in the 2016 TT Zero race. Murata not only sponsored the bike but also provided IGBT gate drive DC/DC conversion technology which helped the team achieve the right balance of power output and energy preservation.

Following investment in Monolith Semiconductor, Littelfuse has set out its roadmap for SiC and IGBT development. The company offers IGBT modules rated up to 1,700V and 600A which are suitable for industrial drives, UPS, solar inverters, EVs and welding machines.

Next-generation power modules, the X-Series dual HV IGBT modules from Mitsubishi Electric are designed for traction and electric power applications in heavy industries.

Part one of this article described the problem, showed the impact of a cold start test pulse on an automotive power supply and discussed a typical pre-booster specification. The second part provided guidance on proper part selection of all relevant components. This third and final partdemonstrates the differences between operation modes and the influence of the inductance and capacitance on performance.By Matthias Ulmann, Texas Instruments.

A high-speed gate driver chipset that includes a logic interface (theIX6610) and a MOSFET/IGBT gate driver (theIX6611) has been announced by IXYS. The chipset is designed forpulse transformer isolated power conversion applications.