Search results for "igbt"

Power componentsare evolving to meet the increasing demands for higher efficiency, smaller size and greater performance in power electronic systems. To provide system designers with a wide range of power solutions, Microchip Technology announces its portfolio of IGBT 7 devices offered in different packages, multiple topologies, and current and voltage ranges.

Following his achievement of the 2024 Millennium Technology Prize, Electronic Specifier spoke with the inventor of the IGBT, Professor Bantval Jayant Baliga, on what it means to him and what he hopes to see in the future.

Vishay Intertechnology has introduced two new IGBT and MOSFET drivers in the compact, high isolation stretched SO-6 package. Delivering high peak output currents of 3A and 4A respectively, the Vishay Semiconductors VOFD341A and VOFD343A offer high operating temperatures to +125°C and low propagation delay of 200ns maximum.

Following his achievement of the 2024 Millennium Technology Prize, Electronic Specifier recently spoke with the inventor of the IGBT, Professor Bantval Jayant Baliga, on what it means to him and what he hopes to see in the future.

The 2024 Millennium Technology Prize has been awarded to Professor Bantval Jayant Baliga of North Carolina State University for his groundbreaking innovation, the commercialisation of the Insulated Gate Bipolar Transistor (IGBT) which has significantly reduced global electrical energy consumption and fossil fuel use.

Magnachip has announced the completion of the development of its 1200V 75A Insulated Gate Bipolar Transistor (IGBT) in a TO-247PLUS package, designed for solar inverters. The Company plans to start mass production in October this year.

New Yorker Electronics has introduced five new Vishay half-bridge IGBT power modules in the newly redesigned INT-A-PAK package.

Vishay Intertechnology has introduced five new half-bridge IGBT power modules in the newly redesigned INT-A-PAK package.

Power Integrations has announced a new family of plug-and-play gate drivers for 62 mm silicon-carbide (SiC) MOSFET and silicon IGBT modules rated up to 1700 V, with enhanced protection features to ensure safe, reliable operation.

Power components are evolving to meet the increasing demands for higher efficiency, smaller size and greater performance in power electronic systems.