Search results for "igbt"

For more than three decades, power transistors have been the growth engine in the $21 billion commodity-filled discrete semiconductor market, handling the vital job of controlling, converting, and conditioning currents and voltages in an ever-expanding range of electronics—including battery-operated portable products, new energy-saving equipment, hybrid and electric vehicles, “smart” electric-grid applications, and renewable pow...

Delivering the ability to monitor IGBT modules to prevent problems rather than react to an incident is a theme at this year’s PCIM exhibition in Nuremberg. Toshiba Electronics Europe (TEE) contribution to meet this demand is a smart gate driver photocoupler with 4A (max) output current housed in a thin SO16L package for use in driving medium-power IGBTs and power MOSFETs.

PCIM 2014: Single driver cores for IGBT modules have been introduced by CT-Concept Technologie. The 1SC0450V cores have blocking voltages of 4.5 and 6.5kV. The core measures 60 x 90mm and the partial-discharge-free, low-coupling-capacitance, high voltage DC/DC transformer height is just 27.5mm.

Targeted at designers who need tomodel new systems faster and more accurately,3D STEP files of all CT-Concept Technologie's SCALE-2 IGBT gate drivers have now been made freely available.3D interactive models of the company’s drivers are also included in new application manuals.

An IGBT gate driver that can operate at 3.3kV, 4.5kV and 6.5kV, with significantly improved reliability and protection in high power modules was launched at PCIM 2014 by UK-based Amantys. The device targets demanding applications including wind turbines, locomotive, HVDC, and industrial drives.

Developed for high-end systems in the industrial sector, Infineon Technologies has introduced the 1EDS-SRC EiceDRIVER Safe driver. The component features the first Slew Rate Control (“SRC”) adjustable in real-time at the IGBT and the secure electric isolation of complies with the strict specifications of VDE 0884-10 and has specially developed short-circuit protection functions.

Surface mount devices are not the answer for every customer and International Rectifier recognised this issue and launched the µIPM-DIP family of highly integrated, compact Integrated Power Modules (IPM). The devices were originally launched, and are still available in a compact, surface mount package.

Energy efficiency is on all agendas and to help meet this requirement STMicroelectronics’ has introduced 1200V IGBTs that leverage second-generation trench-gate field-stop high-speed technology to boost energy efficiency and ruggedness in applications such as solar inverters, welders, uninterruptible power supplies, and Power-Factor Correction (PFC) converters.

Packaged in industry-standard 62mm housing, the CAS300M12BM2 300A, 1.2kV half-bridge module has been introduced by Cree. This silicon-carbide (SiC) module reduces energy loss due to switching by more than five times compared to the equivalent silicon solution, according to Cree. The company has also claimed that this best-in-class efficiency enables for the first time all-SiC high power converters rated up to the megawatt level.

Extending the latest generation of reverse conducting IGBTs for resonant applications, Infineon Technologies has announced the 650V RC-H5 family including a monolithically integrated RC diode. These high performance devices are suitable for applications such as multi-hob induction stoves and inverterised microwave ovens, as well as for all partial hard-switching half-bridge topologies.