Search results for "igbt"
Multi-channel driver & inverter IPMs
ON Semiconductor has further strengthened its portfolio of products for motor control applications with the introduction of two solutions, in A5.225 at electronica, for a variety of industrial, white goods and consumer applications.
1200V IGBTs use trench gate field stop technology
IGBTs from International Rectifier use the company’s trench gate field stop technology. The Generation 8 (Gen8) 1200V IGBTs are delivered in industry standard TO-247 packages. The six devices are available with current ratings from 8A (IRG8P08N120KD) up to 60A (IRG8P60N120KD) with typical VCE(ON) of 1.7V and a short-circuit rating of 10µs.
650V IGBTs optimised for solar & UPS applications
Expanding its portfolio of IGBTs, International Rectifier has announced the IRGP47xx family of rugged, reliable 650V devices. Optimised for ultra-fast switching of 8-30KHz, the IGBTs are designed for applications including solar inverters, welding equipment, industrial motors, induction heating and UPS.
Dual low-side driver IC suits SMPS in EVs & HEVs
Designed to drive large IGBT and MOSFET gates in modules or discrete packages, an automotive-qualified dual low-side driver IC has been introduced by International Rectifier. Extremely low output impedance minimises power losses, making the AUIRB24427S suitable for SMPS applications in EVs, HEVs and high power industrial converters.
SiC power module boosts inverter efficiency
A 1.2kV all-SIC six pack module enables an increase in the power rating of inverters to 50 per cent while reducing power losses by 50 per cent to increase efficiency by 5 per cent. The device is based on Cree’s C2M SiC MOSFET and Z-Rec SiC Schottky diode technology. The all-SiC 1.2 kV, 20A six-pack features the industry’s lowest switching losses due to the zero turn-off tail current in the MOSFET and the zero reverse recovery current ...
Ultra-fast Trench IGBTs are optimised for welding
Providing extremely low conduction and switching losses, International Rectifier's IR66xx series of IGBTs are optimised for welding applications. The high performance 600V ultra-fast Trench-gate IGBTs feature a soft recovery low Qrr diode and ultra-fast switching of 8-30KHz with 5µs short circuit rating.
Converters suit space critical IGBT applications
The TMV-HI series, a family ofhigh I/O isolation DC/DC converters, has been released byPower Sources Unlimited. Offering1W of power, the family is comprised of40 models with input voltage ranges of 5, 12, 15 and 24VDC. The converters feature single output voltages of3.3, 5, 9, 12 and 15VDC ordualoutput voltages of±5, ±9, ±12, ±15 and ±15/-9VDC.
Single-component power elements offer savings & flexibility
A profitable alternative to soldering, Würth Elektronik's robust PowerOne elements are suitable for supplying and distributing high currents in PCB-based systems. Depending on pin configuration and layout, currents of up to 1000A are possible.
Leveraging SiC properties to improve power switches
As the industry pushes forward to realise SiC’s full potential, Jochen Hüskens, Rohm Semiconductor, argues that the next generation of SiC power devices is well-positioned to enable new high-volume applications such as EVs and solid state transformers.
High power interface panel improves connectivity
Trial and error is never a happy path for test engineers to follow, especially so in the case of characterising high power semiconductor devices. It can be time consuming, expensive and unsafe given the high outputs involved in testing power devices. Enhancements to Keithley Instruments’ Parametric Curve Tracer (PTC) configurations that incorporate high power SourceMeter Source Measure Unit (SMU) instruments indicate a new way forward.