Search results for "igbt"

Providing all of the components needed to evaluate CreeMOSFET and Schottky diode performance in a configurable half bridge circuit, Cree has introduced a MOSFET design kit. Quick and easy to assemble and use, the design kit enables comparative testing between IGBTs and Cree MOSFETs, and provides an effective layout example for properly driving Cree MOSFETs with minimal ringing.

Designers using motor control techniques can now visit Mouser Electronics’ new Motor Control Applications site. It provides developers with technology resources, and the newest components available from Mouser Electronics for building motor control systems. The site contains valuable resources for developers interested in expanding their knowledge about motor control systems.

Designed for power-efficient motor driving and inverter applications, the Intelligent Power Module (IPM) series has been released by ROHM Semiconductor. The series consists of IGBT based modules optimised for low or high speed operation, and MOSFET based IPMs which integrate the company’s Low Ron SuperJunction MOSFET, PrestoMOS. 10,15 and 20A versions of 600V IGBTs/IPMs are currently available, and 30A versions under development.

The TO-247PLUS package has been introduced by Infineon Technologies, expanding its discrete IGBT portfolio for high power applications. The package, which has the same footprint and pin-out as JEDEC standard TO-247-3, enables up to 120A IGBT co-packed with a full rated diode.

Vishay Intertechnology has introduced the Trench-IGBTplatform featuring Punch Through (PT) and Field Stop (FS) technologies. Designed to increase efficiency in motor drives, UPS, solar inverters, and welding machine inverters, the devices, offer low collector-to-emitter voltages, as well as fast and soft turn-on and -off for low conduction and switching losses.

Modules rated up to 1700V and 450A extend Littelfuse’s IGBT power control semiconductor offering. The company now offers half-bridge, six-pack, and PIM modules in S, D, H, W, and WB packages. As well as standard offerings, customised versions can meet exact specifications in drives and motion control, solar inverters, UPS and SMPS, and welding machines.

Offering the strengths of both MOSFETs and IGBTs, the BiMOSFET series of Reverse Conducting IGBTs has been released by IXYS. The 3600V devices, which are suitable for high speed, high voltage, and high current power conversion applications feature ‘free’ intrinsic body diodes, and have current ratings from 45 to 125A.

Utilising advanced trench-gate field-stop technology to save more energy and increase reliability, the M-series 1200V IGBTs have been introduced by STMicroelectronics. The devices are suited for use in hard-switching circuits operating at up to 20kHz in applications such as solar inverters, welding equipment, UPS and industrial motor drives.

International Rectifier has introduced a comprehensive family of IGBT modules with a broad array of configurations and current ratings offering designers the flexibility to easily implement high power systems. The 72 modules are available with voltage ratings of 600 or 1200V and a variety of speeds and short circuit ratings to allow designers to optimise systems based on application requirements.

Addressing the need for increased power density and space saving in applications requiring high efficiency, Infineon Technologies has released a variant of the TO-247 package. The TO-247 4 Kelvin-Sense package provides efficiency levels previously unavailable when used together with the company’s TRENCHSTOP 5 IGBT and Rapid diode technologies.