Search results for "igbt"

This yearat Applied Power Electronics Conference and Exposition (APEC), 15th to 19th March in North Carolina, Cree is exhibiting at booth #1417 and speaking at the conference. This year marks the 30th anniversary of the conference, which focuses on the practical and applied aspects of the power electronics business.

Fukushima SiC Applied Engineering has selected ROHM’s SCT2080KE SiC MOSFET for use in its SiC-Pulser series of high voltage pulse generators.Pulse generators are used in a variety of applications, including high voltage accelerators, plasma generators and laser processing machines. Conventional systems utilise silicon devices or vacuum tubes as switching elements. However, this often entails a large number of system components which results...

At APEC 2015, Vishay Intertechnology will be highlighting its latest power MOSFET, passive component and diode technologies for a wide range of applications.

Mouser Electronics is now stocking the PT62SCMDxx Dual SIC MOSFET Driver Boards from Cree. Designed to drive the CREE CAS300M17BM2 SIC MOSFET modules, the PT62SCMD12 and PT62SCMD17 single-board solutions are dual silicon carbide (SiC) MOSFET gate drivers optimised to ensure maximum performance for SiC modules.

Optimised for 50Hz to 20kHz switching frequencies typically found in PV and welding inverters, Infineon announces a new class of low saturation voltage (V CE(sat)) IGBTs. The L5 family is based on the TRENCHSTOP 5 thin wafer technology with an optimised carrier profile further reducing the intrinsically low conduction losses.

Avago hasannounced two sets of high speed gate drive optocoupler devices, the ACPL-P/W347 and ACPL-P/W349. These devices are 1.0A and 2.5A gate drive optocouplers designed to protect and drive fast switching next-gen power semiconductors like SiC and GaN MOSFETs and IGBTs in applications such as power inverters, motor drives, and switching power supplies.

Suited for energy-conscious applications such as inverters for EVs/HEVs, solar or wind power generation, high-efficiency drives, power supplies and smart-grid equipment, the SCT20N120 SiC power MOSFET has been introduced by STMicroelectronics.

The Yokogawa DLM4000 8-channel mixed-signal oscilloscope is playing a key part in pre-compliance tests on high-power inverter drives produced by PCS (Power Convertor Solutions) in Berlin, Germany. The company, part of the Knorr-Bremse Group, develops and manufactures modular inverter systems for power ratings from 5 kW to 7 MW.

GaN Systems is stepping up its sales effort in Europe. It has signed a distribution agreement with Ecomal Europe to promote and distribute its gallium nitride (GaN) high power switching transistors. The partnership is seen as synergistic by both GaN Systems and Ecomal Europe, as many of GaN Systems’ prospective customers in the region already have a relationship with Ecomal Europe.

Designed to improve the performance of high-voltage IGBTs in voltage classes from 1200V up to 6.5kV, two power module platforms have been released by Infineon Technologies. Currently, the power module platforms are suitable for 3.3, 4.5, and 6.5kV IGBTs measuring 100x140x40mm.