Search results for "igbt"
Robust 650V IGBTs reduce EV & HEV power losses
Reducing power losses and improving reliability in EV and HEV applications, a family of robust 650V IGBTs has been introduced by Infineon Technologies. The automotive qualified TRENCHSTOP 5 AUTO IGBTs feature current ratings of 40 or 50A and are designed for on-board charging, PFC, DC/DC and DC/AC conversion.
Cree to speak at APEC conference
This yearat Applied Power Electronics Conference and Exposition (APEC), 15th to 19th March in North Carolina, Cree is exhibiting at booth #1417 and speaking at the conference. This year marks the 30th anniversary of the conference, which focuses on the practical and applied aspects of the power electronics business.
Vishay Intertechnology to exhibit at APEC 2015
At APEC 2015, Vishay Intertechnology will be highlighting its latest power MOSFET, passive component and diode technologies for a wide range of applications.
SiC MOSFET enables miniaturisation in pulse generators
Fukushima SiC Applied Engineering has selected ROHM’s SCT2080KE SiC MOSFET for use in its SiC-Pulser series of high voltage pulse generators.Pulse generators are used in a variety of applications, including high voltage accelerators, plasma generators and laser processing machines. Conventional systems utilise silicon devices or vacuum tubes as switching elements. However, this often entails a large number of system components which results...
MOSFET driver boards primed for IGBT modules
Mouser Electronics is now stocking the PT62SCMDxx Dual SIC MOSFET Driver Boards from Cree. Designed to drive the CREE CAS300M17BM2 SIC MOSFET modules, the PT62SCMD12 and PT62SCMD17 single-board solutions are dual silicon carbide (SiC) MOSFET gate drivers optimised to ensure maximum performance for SiC modules.
IGBTs' low switching frequencies suit PV inverters
Optimised for 50Hz to 20kHz switching frequencies typically found in PV and welding inverters, Infineon announces a new class of low saturation voltage (V CE(sat)) IGBTs. The L5 family is based on the TRENCHSTOP 5 thin wafer technology with an optimised carrier profile further reducing the intrinsically low conduction losses.
Optocouplers protect & drive SiC & GaN power devices
Avago hasannounced two sets of high speed gate drive optocoupler devices, the ACPL-P/W347 and ACPL-P/W349. These devices are 1.0A and 2.5A gate drive optocouplers designed to protect and drive fast switching next-gen power semiconductors like SiC and GaN MOSFETs and IGBTs in applications such as power inverters, motor drives, and switching power supplies.
SiC MOSFETs suit energy-conscious applications
Suited for energy-conscious applications such as inverters for EVs/HEVs, solar or wind power generation, high-efficiency drives, power supplies and smart-grid equipment, the SCT20N120 SiC power MOSFET has been introduced by STMicroelectronics.
Mixed-signal scope plays key role in inverter tests
The Yokogawa DLM4000 8-channel mixed-signal oscilloscope is playing a key part in pre-compliance tests on high-power inverter drives produced by PCS (Power Convertor Solutions) in Berlin, Germany. The company, part of the Knorr-Bremse Group, develops and manufactures modular inverter systems for power ratings from 5 kW to 7 MW.
Ecomal deal steps up Gan Systems sales effort
GaN Systems is stepping up its sales effort in Europe. It has signed a distribution agreement with Ecomal Europe to promote and distribute its gallium nitride (GaN) high power switching transistors. The partnership is seen as synergistic by both GaN Systems and Ecomal Europe, as many of GaN Systems’ prospective customers in the region already have a relationship with Ecomal Europe.