Search results for "igbt"

Expanding its optoelectronics portfolio, Vishay Intertechnology has announced a low-profile, SMD, 2.5A IGBT and MOSFET driver for motor drives, alternative energy, welding equipment and other high-working-voltage applications. The VOL3120 features a small footprint with a 2.5mm height and minimum 8mm clearance and external creepage distance.

Claimed to be the world’s first trench-type SiC MOSFET, Rohm has announced mass production of an SiC MOSFET that reduces on resistance by 50%, compared to planar SiC MOSFETs, says the company.

To increase the power-conversion efficiency of UPSs, solar generators, welders, industrial motor drives and similar equipment, the S-series 1200V IGBTs from STMicroelectronics are optimised for the lowest combined conduction and turn-off losses at switching frequencies up to 8kHz.

Silicon has been made more robust, claims Fairchild Semiconductor, at the announcement of its fourth generation Field Stop (FS) IGBTs. The IGBTs will target solar and battery chargers as well as UPS, where fast switching and low conduction losses can reduce system cost and increase power density.

Highlighting its robust portfolio of thermal-management solutions for HEVs and EVs,Dana Holding will be at the PCIM Europeexhibition from 19thto 21st May. Among Dana's customisable technologies will be the company's Long brand of aluminium integrated cooling plates, which ensure the performanceand reliability of IGBT switches.

A dual-channel gate-driver core for 90kW to 500kW inverters and converters has been introduced by Power Integrations. Leveraging SCALE-2+ integrated circuit and isolated transformer technology for DC/DC power and switching signal transmission, the 2SC0115T2A0-12 driver core improves system reliability and performance by eliminating the need for an opto-coupler.

Pulse Electronics has expanded its P0584/85NL high isolation gate drive transformer line with a series that uses insulation wire on all windings, making them compliant to safety standards such as IEC61558 and IEC60601 for reinforced isolation.

At PCIM 2015, Infineon Technologies will present the latest generation of its PrimePACK power modules, which benefit from the new generation of Infineon’s IGBTs. The combination of the IGBT5 and the innovative .XT interconnection technology is an important milestone in IGBT chip and interconnection technologies.

PCIM 2015 will pay host, for the first time in Europe, to the combined power portfolio of Infineon and International Rectifier, in hall 9, booth 412, from 19th to 21st May 2015. The result of Infineon'sstrategic approach, outlined as “from product thinking to system understanding,” the company's range of products includes MOSFETs, IGBTs, GaN devices and speciality materials.

GaN Systems has confirmed what it calls the ‘world’s smallest’ 650V, 15A gallium nitride transistor, in the wake of the 2015 PCIM conference in Nürnberg, Germany. With a footprint of just 5.0x6.5mm, the GS66504B - one of a family of 650V devices that spans 7 to 200A - is 50% smaller than competing devices.