Search results for "transistor"

Tektronix, Inc. today announced that its next-generation, scalable, performance oscilloscope platform will make broad use of IBM 8HP silicon germanium (SiGe) technology. Tektronix demonstrates its commitment to help engineers around the world speed debug and test tomorrow's designs. The 130 nanometer (nm) SiGe bipolar complementary metal oxide semiconductor (BiCMOS) foundry technology offers 2x performance over the previous generation — and tar...

Kilopass Technology Inc., has announced that U.S. District Court has delivered a Markman Order favorable to Kilopass on all of the ten most disputed patent terms in its litigation against Sidense. This favorable result will help the jury understand more clearly Kilopass’ infringement case against Sidense in the upcoming trial in the spring of 2012.

Enpirion announced the availability of the EN2300 family of fully integrated 12 Volt DC-DC converters, implemented in the company’s industry leading power MOSFET technology with double the power density over alternative solutions.

M/A-COM Technology Solutions is showcasing a broad portfolio of new products suitable for military communications at the MILCOM, 2011 tradeshow, in Baltimore, Maryland.

Most of the current high power semiconductors are optimized for switching frequencies between 4 and 8 kHz. Today, however, more and more applications require frequencies of 10 kHz and higher. New power modules specifically designed for higher frequencies can now fill that gap.

Renesas Electronics have announced the development of the MC-7802, a gallium nitride (GaN) power amplifier module for 1-gigahertz (GHz) CATV (cable television) systems.

Si3226x Dual ProSLIC Family Reduces Cost, Board Size and Power Consumption for Wide Range of VoIP Customer Premises Equipment

Addressing market demand for RF power devices featuring enhanced ruggedness and wideband operation over a broad frequency range, Freescale has released two highly versatile devices engineered to deliver new levels of linearity and ruggedness for RF power products manufactured using LDMOS process technology.

RFMD’s new RF3928B is a 65V 380W high power discrete amplifier designed for S-Band pulsed radar, Air Traffic Control and Surveillance, and general purpose broadband amplifier applications. The RF3928B is a matched GaN transistor in a hermetic, flanged ceramic package. This package provides thermal stability through the use of advanced heat sink and power dissipation technologies.

Imec, Holst Centre and their partners in the EU FP7 project ORICLA have fabricated the world’s first RFID (radio frequency identification) circuit made in low-temperature thin-film technology that allows reader-talks-first communication. The technology behind this prototype is indispensable to create RFID tags that are cheap enough and have enough performance to be used as intelligent item-level tags on the packaging of retail consumer goods.