Search results for "transistor"

BEC Distribution has announced the availability of high-quality alternatives for STMicroelectronics and onsemi IGBT Transistors. They are available on a 4-6 weeks lead time with free samples provided on request.

Researchers at the University of Basel and the NCCR SPIN accomplished the first controllable interaction between two hole spin qubits within a conventional silicon transistor.

Infineon has announced two new generations of high voltage (HV) and medium voltage (MV) CoolGaN devices which now enable customers to use Gallium Nitride (GaN) in voltage classes from 40V to 700V in a broader array of applications that help drive digitalisation and decarbonisation.

Sondrel has announced that it has completed its most complex chip design to date. Designed on a 5nm process node, this complex design has more than 50 billion transistors.

Mouser Electronics has released a new eBook in collaboration with Analog Devices (ADI) and Bourns exploring the challenges and benefits of Gallium Nitride (GaN) technology in the pursuit of efficiency, performance, and sustainability.

The TPS7H60x3-SP series of radiation-hardness-assured (RHA) gallium nitride (GaN) field effect transistor (FET) gate drivers is designed for high frequency, high efficiency applications. The series consists of the TPS7H6003-SP (200V rating), TPS7H6013-SP (60V rating), and the TPS7H6023-SP (22V rating).

Junkosha has chosen SEMICON Europa to announce the launch of its EPTFE Flat Cable designed for critical components inmanufacturing and inspection equipment.

Vishay has announced that it will be exhibiting its broad portfolio of passive and semiconductor solutions at electronica 2024 and discussing their pivotal role in shaping a sustainable future through the all-electric society. Vishay experts will be on hand to dive into cutting-edge developments in automation, AI, e-mobility, and smart and alternative energy technologies.

Following his achievement of the 2024 Millennium Technology Prize, Electronic Specifier spoke with the inventor of the IGBT, Professor Bantval Jayant Baliga, on what it means to him and what he hopes to see in the future.

Infineon recently announced the laucnh of a new family of high-voltage discretes, the CoolGAN Transisotrs 650V G5, strengthening its Gallium Nitride (GaN) portfolio.