Search results for "transistor"
Microchip Technology Debuts USB/AC Load-Sharing Li-Ion/Li-Polymer Battery Charger
Microchip announces the MCP73871 charge-management controller—a Li-Ion/Li-Polymer charger with an intelligent charge management feature that enables simultaneous AC-DC-adapter or USB-port charging and powering of devices. The single-chip charger features an integrated pass transistor and numerous battery and termination-voltage options, making it ideal for complex, space-constrained portable applications.
Single-Cell Li-Ion / Li-Polymer Chargers in SOT-23 Packages
Microchip has announced its MCP7381X Li-Ion/Li-Polymer charge-management controllers. Offering programmable charge currents up to 500 mA, they feature integrated current sense, integrated pass transistor, thermal regulation and reverse battery protection, all in a 5-pin SOT-23 package.
QVGA Graphics Solution for Cost-Sensitive Embedded Display Applications
Microchip has announced a QVGA Graphics Solution for implementing graphics display and control in cost-sensitive applications. The new, easy-to-use solution for PIC24 16-bit microcontrollers includes a free, highly optimized graphics library with source code; third-party library support; and the new Graphics PICtail Plus daughter board.
Peregrine Semiconductor and Soitec Announce New Bonded Silicon-on-Sapphire Substrate for RFIC Manufacturing
Peregrine Semiconductor and Soitec (Euronext Paris), the world’s leading supplier of silicon-on-insulator (SOI) wafers and advanced solutions for the electronics and energy industries, today announced the joint development and ramp in production of a new, bonded silicon-on-sapphire (SOS) substrate which has been qualified for use in manufacturing Peregrine’s next-generation STeP5 UltraCMOS™ RF IC semiconductors. This announcemen...
Renesas Electronics Introduces Power MOSFETs with Compact Package and Improved Performance for Automotive Applications
Renesas introduced today 32 new N-channel power metal-oxide-semiconductor field-effect transistors (MOSFETs) with voltage tolerances of 40 and 55 volts (V). The new power MOSFETs include the NP75N04YUK device, featuring a compact HSON package with one-half the mounting area of the existing TO-252 package and the ability to handle current flows of up to 75 amperes (A).
Highly Integrated Digital Transistors
Fairchild Semiconductor has introduced two families of 200mW digital transistors that integrate an external resistor bias network into the smallest form factor package on the market. Tailored for use in switching, inverter, interface and driver circuits, the FJY30xx (NPN) and FJY40xx (PNP) series eliminate the need for an external resistor. This integration reduces part count, which in turn helps designers save board space, lower design costs, si...
Fairchild Semiconductor Receives Assodel's Best Semiconductor Vendor Award
Fairchild Semiconductor has been awarded the Best Semiconductor Vendor in Italy for 2009 from Assodel. This award recognizes companies that show continued commitment and proactively strive to develop partnerships with distribution partners. This is the second year that Fairchild has been recognized by Assodel, receiving the Best Manufacturer Award in the power category for 2008.
600V/30A IGBT Improves Energy Efficiency in Low-Frequency Industrial Applications
Fairchild Semiconductor’s 600V/30A IGBT, the FGH30N60LSD, addresses the need for low conduction losses in low-frequency (50~400Hz) industrial applications such as solar inverters, welding machines and uninterruptible power supplies (UPS). Featuring extremely low saturation voltage (VCE(sat) , Typ. = 1.1 V), the FGH30N60LSD is specially designed to increase system efficiency while meeting low-frequency requirements.
Toshiba develops leading-edge silicon nanowire transistor for 16nm generation and beyond
Toshiba Corporation announced that it has developed a breakthrough technology for a nanowire transistor, a major candidate for a 3D structure transistor for system LSI in the 16nm generation and beyond. The company has achieved a 1mA/μm on-current, the world’s highest level for a nanowire transistor, by reducing parasitic resistance and improving the on-current level by 75%. This is a major step towards practical application of nanowire tr...
Toshiba develops essential technology for spintronics-based MOS field-effect transistor
Toshiba Corporation today announced that it has developed MOSFET1 cell based on spin transport electronics, or spintronics, an advanced semiconductor technology that makes use of the spin and magnetic moment inherent in electrons. Toshiba has fabricated a spintronics cell and verified its stable performance for the first time, and will present full details of the cell and its technologies at the International Electronics Devices Meeting2 in Balti...