Search results for "transistor"

Applied Materials, Inc. has announced it has expanded its portfolio of applications for the Applied Endura® Avenir™ RF PVD* system to include the deposition of nickel-platinum (NiPt) alloys, enabling the scaling of transistor contacts to the 22nm technology node and beyond.

NXP Semiconductors N.V. will demonstrate a component for a complete, mixed signal, Base Transceiver Station (BTS) radio at the IEEE International Microwave Symposium (IMS 2011) to be held June 5-10 in Baltimore, Maryland (booth #420). The NXP BTS transceiver component demonstrator fully supports the demanding requirements of leading-edge wireless air interface standards, such as LTE Advanced, and showcases NXP’s new and complete product portfol...

Cree, Inc. will demonstrate the industry’s first GaN HEMT MMIC high power amplifier (HPA) for satellite communication applications at the 2011 IEEE International Microwave Symposium held June 7-9 in Baltimore. The demonstration product offers dramatic performance improvements over existing commercially-available GaAs MESFET transistors or Traveling Wave Tube-based amplifiers.

NXP Semiconductors N.V. has introduced its eighth generation (Gen8) LDMOS RF power transistors for wireless base stations – allowing signal bandwidths up to 60MHz and providing optimized I/O matching structures to enable wideband, affordable, compact, multi-standard and highly efficient Doherty power amplifiers.

Designed for the toughest engineering environments, NXP Semiconductors N.V. has unveiled its new XR family of “eXtremely Rugged” LDMOS RF power transistors. The XR family is designed tough-as-nails to withstand the harsh fault conditions often found in applications such as industrial lasers, metal etching and concrete drilling. Based on NXP’s industry-leading LDMOS technology, the XR family extends LDMOS into the few remaining domains that ...

SemiSouth Laboratories, Inc introduit la carte SGDR2500P2, à fonction de commande de grille à deux étages et offrant deux sorties opto-isolées, à utiliser avec les modules d’alimentation incorporant les transistors VJFET (à effet de champ à jonction à tranchée verticale) de SemiSouth comme principaux commutateurs. La SGDR2500P2 fournit des sorties côté haut et côté bas isolées électriquement, de courant crête +20/-10 A, autorisa...

SemiSouth Laboratories, Inc., leader des transistors de puissance en carbure de silicium (SiC) pour conversion et gestion d’énergie à haut rendement en milieu difficile, double l’intensité nominale de ses diodes SiC en boîtier DPAK, qui passe de 5 A à 10 A.

SemiSouth Laboratories, Inc. has announced the SGDR2500P2, a dual-output, two-stage, opto-isolated gate driver board intended for use with power electronics modules that incorporate SemiSouth’s vertical-trench junction field-effect transistors (VJFETs) as the primary switches. The board provides electrically isolated high-side and low-side outputs with peak current levels of +20/-10 A, enabling fast switching speeds and yielding record-low swit...

SemiSouth Laboratories, Inc. is pleased to announce its 30th US patent granted by the US Patent and Trademark Office. US Patent 8,169,022 was issued on May 1, 2012, and is entitled “Vertical Junction Field Effect Transistors and Diodes Having Graded Doped Regions and Methods of Making.” It was co-invented by Dr. Michael Mazzola, a co-founder of SemiSouth in 2000 when the company spun off of Mississippi State University.

Power Integrations (Nasdaq: POWI), the leader in high-voltage integrated circuits for energy-efficient power conversion, today announced a strategic investment in SemiSouth Laboratories, Inc., a Mississippi-based manufacturer of high-voltage silicon-carbide (SiC) semiconductor devices. Power Integrations’ commitment of $30 million, which includes an equity investment in SemiSouth, a technology license and other financial commitments, will help ...