Search results for "transistor"
Toshiba develops leading-edge silicon nanowire transistor for 16nm generation and beyond
Toshiba Corporation announced that it has developed a breakthrough technology for a nanowire transistor, a major candidate for a 3D structure transistor for system LSI in the 16nm generation and beyond. The company has achieved a 1mA/μm on-current, the world’s highest level for a nanowire transistor, by reducing parasitic resistance and improving the on-current level by 75%. This is a major step towards practical application of nanowire tr...
Toshiba develops essential technology for spintronics-based MOS field-effect transistor
Toshiba Corporation today announced that it has developed MOSFET1 cell based on spin transport electronics, or spintronics, an advanced semiconductor technology that makes use of the spin and magnetic moment inherent in electrons. Toshiba has fabricated a spintronics cell and verified its stable performance for the first time, and will present full details of the cell and its technologies at the International Electronics Devices Meeting2 in Balti...
Tektronix Commits to 200 GHz SiGe Technology for High-Speed Oscilloscopes
Tektronix, Inc. today announced that its next-generation, scalable, performance oscilloscope platform will make broad use of IBM 8HP silicon germanium (SiGe) technology. Tektronix demonstrates its commitment to help engineers around the world speed debug and test tomorrow's designs. The 130 nanometer (nm) SiGe bipolar complementary metal oxide semiconductor (BiCMOS) foundry technology offers 2x performance over the previous generation — and tar...
Kilopass Receives Favorable Markman Order Ahead of Its Patent Infringement Trial Against Sidense
Kilopass Technology Inc., has announced that U.S. District Court has delivered a Markman Order favorable to Kilopass on all of the ten most disputed patent terms in its litigation against Sidense. This favorable result will help the jury understand more clearly Kilopass’ infringement case against Sidense in the upcoming trial in the spring of 2012.
Enpirion Announces EN2300 family of 12 volt integrated power IC solutions delivering the industry’s highest power density
Enpirion announced the availability of the EN2300 family of fully integrated 12 Volt DC-DC converters, implemented in the company’s industry leading power MOSFET technology with double the power density over alternative solutions.
M/A-COM Technology Solutions Showcases New Products at MILCOM, 2011
M/A-COM Technology Solutions is showcasing a broad portfolio of new products suitable for military communications at the MILCOM, 2011 tradeshow, in Baltimore, Maryland.
Power modules for fast switching motor drive applications
Most of the current high power semiconductors are optimized for switching frequencies between 4 and 8 kHz. Today, however, more and more applications require frequencies of 10 kHz and higher. New power modules specifically designed for higher frequencies can now fill that gap.
Renesas Electronics Announces GaN Power Amplifier Module that Delivers Industry-Leading High Output and Low Distortion for CATV Applications Using the 1 GHz Band
Renesas Electronics have announced the development of the MC-7802, a gallium nitride (GaN) power amplifier module for 1-gigahertz (GHz) CATV (cable television) systems.
Silicon Labs Introduces Industry’s Most Advanced SLIC Solution for Voice-over-IP Gateways
Si3226x Dual ProSLIC Family Reduces Cost, Board Size and Power Consumption for Wide Range of VoIP Customer Premises Equipment
RF3928B 380W GaN Wideband Pulsed Power Amplifier
RFMD’s new RF3928B is a 65V 380W high power discrete amplifier designed for S-Band pulsed radar, Air Traffic Control and Surveillance, and general purpose broadband amplifier applications. The RF3928B is a matched GaN transistor in a hermetic, flanged ceramic package. This package provides thermal stability through the use of advanced heat sink and power dissipation technologies.