Search results for "transistor"
Industry’s Smallest Bipolar Transistors Help Shrink Portable Designs
Diodes Inc has today introduced the industry’s first small-signal bipolar transistors in a miniature DFN0806-3 package. The new MMBT3904FA, MMBT3906FA, BC847BFA and BC857BFA transistors feature a footprint of 0.48mm2 and an off-board profile of only 0.4mm. This makes the bipolar transistors 20% smaller than equivalent devices in DFN1006, SOT883 and SOT1123 packages.
Mentor Graphics explore Cell-Aware ATPG
Finding, identifying and fixing manufacturing defects and systemic yield limiters within library cells at 90nm and beyond. Stephen Pateras, product marketing director for Mentor Graphics Silicon Test product, explores Cell-Aware ATPG in this article from ES Design magazine.
A New Generation
Innovations in design are helping automotive manufacturers to simplify systems and reduce component count, by implementing more functions while reducing board space requirements and power consumption. By Thomas Mueller, Product Manager, Automotive ASICs with ams AG.
Microsemi Releases New Generation of IGBTs for Industrial Applications
Microsemi launches its next-gen 650 volt non-punch through insulated bipolar gate transistors, offered in 45A, 70A and 95A current ratings. Microsemi's new NPT IGBT product family is designed for operation in harsh environments and is particularly well-suited for industrial products such as solar inverters, welders and switch mode power supplies.
Fujitsu to Begin Sample Shipments of GaN Power Device with 150V Breakdown Voltage
Fujitsu Semiconductor Limited today announced the release of MB51T008A, a silicon substrate-based, gallium-nitride (GaN) power device that features a breakdown voltage of 150 V. Sample quantities of the new product will be made available starting July 2013. The new device, which enables normally-off operations, is capable of achieving roughly one half the figure of merit (FOM) of silicon-based power devices with an equivalent breakdown voltage. W...
CamSemi launches first PSS controller to use advanced BJT drive scheme
CamSemi has today announced recent advances in the company’s bipolar transistor drive scheme and the first of a new generation of Primary Side Sensing controllers to exploit these developments. The new C2172 PSS controller will enable manufacturers to develop what the company believes will be the industry’s lowest cost, most energy-efficient BJT-based solutions for mobile phone chargers and other universal input applications rated to 6.5 W.
Making TV More Lifelike with iWatt's iW7019
The iW7019, an 8-channel LED backlight driver is designed to deliver better screen performance and lower cost in next-generation 2D and 3D LCD TVs has today been introduced by iWatt. The iW7019 gives designers a rich set of integrated features to improve picture quality and render a more lifelike viewer experience. These include both head and tail-mode pulse width modulation dimming to reduce motion blur, and high-resolution, 12-bit local dimming...
NXP Unveils Extremely Rugged LDMOS RF Power Transistor
NXP announce the BLF188XR – the newest member of its XR family of “eXtremely Rugged” LDMOS RF power transistors. Designed for the toughest engineering environments, the BLF188XR delivers improved ruggedness in real-world conditions, capable of withstanding a severe load mismatch with VSWR greater than 65:1 at 5 dB of compression.
Is Solid-State RF the Next Energy Source?
Could radio frequency signals become the next major energy source for industrial, scientific and medical (ISM) applications? At the IEEE International Microwave Symposium this week, NXP Semiconductors N.V. is introducing the industry’s first complete RF power transistor portfolio designed specifically for the 2.45-GHz ISM frequency band, enabling RF energy to be used as a clean, highly efficient and controllable heat source.
Toshiba Develops World’s First Multi-level-cell Structure MROM cell
Toshiba Corporation today announced that the development of the world's first MROM cell to offer improved cell current characteristics without any increase in cell size. This advance was achieved by adopting a multi-level-cell structure, which also secures high speed operation.