Search results for "transistor"
Protect IGBTs By Sensing Current Using Optical Isolation Amplifiers White Paper
Insulated-gate bipolar transistors require full protection to avoid damage and failures resulting from conditions such as short circuits, overloads and overvoltages. The protection is key to ensuring safe and stable power-converter operations in applications such as motor drives and solar and wind power generation systems. To detect over-current and overload conditions, isolation amplifiers featuring fast response or fast fault feedback can be us...
Gate Drive Optocouplers For HEV Electric Motor Inverters White Paper
Hybrid electric vehicles save fuel because of their electric motor drive. In an HEV, the propulsion system can be configured several ways, for example in the electric motor assisted mode or in the fully electric motor drive mode. For electric motor drive an inverter system is required to deliver powerful and efficient drive to the electric motor.
Toshiba Announce Development Of MOSFETs For RF/Analog Applications
Toshiba have today revealed the development of a high power gain transistor using a CMOS compatible process. The transistor efficiently reduces power consumption in high frequency RF/analog front-end application. Details will be presented on June 12 at the 2013 Symposia on VLSI Technology and Circuits, held in Kyoto, Japan, June 11-14, 2013.
ISORG And Plastic Logic Develop World’s First Image Sensor On Plastic
ISORG and Plastic Logic have co-developed the first conformable organic image sensor on plastic, with the potential to revolutionise weight/power trade-offs and optical design parameters for any systems with a digital imaging element. The first mechanical samples will be publicly unveiled at LOPE-C 2013 (ISORG / CEA booth B0-509) from 12 to 13 June in Munich, Germany.
Synopsys and UMC Collaborate to Accelerate Development of UMC's 14-nm FinFET Process
Synopsys and United Microelectronics Corporation today announced that the collaboration between the two companies has resulted in the successful tapeout of UMC's first process qualification vehicle in its 14-nanometer (nm) FinFET process utilizing Synopsys' DesignWare Logic Library IP portfolio and StarRC parasitic extraction solution, a part of the Galaxy Implementation Platform.
Synopsys Collaborates with A*STAR IME to Optimize TSI Technology
Synopsys announced that it will join Singapore's A*STAR Institute of Microelectronics -led 2.5D TSI Consortium to provide the framework for heterogeneous 3D-IC systems using through-silicon interposer technology. Synopsys will contribute its market expertise to the consortium to optimize TSI technology for cost-effective and performance-driven applications. The consortium's research and development efforts will lead to the demonstration of a hete...
RFMD Announces 500 Watt GaN L-Band Amplifier
RF Micro Devices introduce the RFHA1027 gallium nitride matched power transistor delivering industry-leading pulse power performance of 500W in a compact flanged package at L-Band. RFMD's new amplifier is optimized for pulsed power applications requiring efficiency and compact size. It operates from 1.2 GHz to 1.4 GHz and provides 500W of pulsed RF power from a 50 Volt supply.
NXP and SES Achieve Breakthrough for Mass Adoption of NFC in Retail
NXP Semiconductors and Store Electronic Systems today announced their cooperation to enable the large-scale adoption of NFC technology within the retail industry. NXP, the global leader in NFC solutions, is supporting SES with the integration of its leading-edge NFC NTAG chips in SES’s electronic shelf label solutions.
Toshiba Adds High Gain 200W GaN HEMT Power Amplifier for C-Band RADAR Applications
Toshiba America Electronic Components today announced the addition of a 200W C-Band gallium nitride semiconductor High Electron Mobility Transistor to its power amplifier product family. The new device will be shown during the conference exhibition portion of the 2013 IEEE MTT-S International Microwave Symposium from June 4-6 in Seattle, Washington.
Is Solid-State RF The Next Energy Source?
Could radio frequency signals become the next major energy source for industrial, scientific and medical applications? At the IEEE International Microwave Symposium this week, NXP is introducing the industry’s first complete RF power transistor portfolio designed specifically for the 2.45-GHz ISM frequency band, enabling RF energy to be used as a clean, highly efficient and controllable heat source.