Search results for "transistor"
Electroless plating process enables economical OFET formation
Electroplating Engineers of Japan, which operates the Tanaka Precious Metals Group's plating business, together with Professor Junichi Takeya, Graduate School of Frontier Sciences,University of Tokyo, has developed the world's first technology for the simultaneous formation of contact electrodes for p-type and n-type1 Organic-semiconductor Field Effect Transistors (OFETs) using an electroless plating process.
GaN protection at any power up/power down sequence
A GaN bias controller and sequencer for fixed and pulsed negative gate biasing has been introduced by M/A-COM Technology Solutions. The MABC-001000-DP000L provides proper gate voltage and pulsed drain voltage biasing for a Device Under Test (DUT). The device also provides bias sequencing, ensuring that the pulsed drain voltage cannot be applied to a device under test unless the negative gate bias voltage is present.
'Precious Metals Research Grants' awarded
Tanaka Holdings have announced the recipients of the Tanaka Precious Metals' 2014 'Precious Metals Research Grants.' After a strict examination of the results, Associate Professor Yu-Ching Lin of Tohoku University and Assistant Professor Tsuyoshi Minami of Yamagata University were selected to receive the 2m yen 'Gold Award.'
Heatsink material reduces footprint & increases efficiency
A range of low profile, air cooled heat sinks has been introduced by Versarien Technologies. The heat sinks feature the company’s VersarienCu material, a copper foam which features fine, open, interconnected pores that emulate structures commonly found in nature. These pores increase the surface area of the heat sinks, which allows them to be reduced in size and provide an improved thermal performance.
Updated model for UTBB-FDSOI technology is more accurate
CEA-Leti today announced that the newest version of its advanced compact model for UTBB-FDSOI technology is now available in all major SPICE simulators.Leti-UTSOI2.1 improves the predictability and accuracy capabilities of the Leti-UTSOI2 compact model, which was developed in 2013 to describe the electrical behaviour of FDSOI transistors by taking into account all their specificities.
Next-gen power systems showcased at APEC 2015
ON Semiconductorwill showcase some of its latest advances in power management technology at APEC 2015, including an LLC current-mode power supply for computers and LED TVs, developments in GaN, and a sensor-less motor driver controller.Additionally, ON Semiconductor technical experts will giveProfessional Education Seminars at APEC as part of the conference agenda.
imec & sureCore start SRAM design IP collaboration
sureCore and imec are collaborating on low-power SRAM IP, including the licensing of a set of imec SRAM design IP to sureCore to expand sureCore's IP portfolio and a participation in sureCore. In order to tap into the design ecosystem around imec, sureCore will establish a branch in Leuven which will consist of highly experienced designers who built up their expertise at imec and who will be instrumental in the collaboration between sureCore and ...
Efficient SBC suits digital signage & image processing
Advantech has announced the arrival of the MIO-2263 SBC in a 2.5” Pico-ITX (100x72mm) form factor. Based on the Intel Atom processor E3800 product family, it is the first SoC designed for intelligent systems with quad core computing, high graphics and media performance. MIO-2263 is a fanless SBC designed for operation across the temperature range of -40 to +85°C.
Synchronous buck DC/DC IC design
Besides the power efficiency, a key performance requirement for point of load power supply ICs is the transient performance. Sudden changes in the current drawn by the load (for example, an FPGA) require a fast response from the power supply. Such fast variations of the output current, however, cause transient spikes on the output voltage, whose amplitude and duration depend on the transfer function of the regulation loop.
Infineon Technologies & Panasonic to develop GaN devices
Infineon Technologies and Panasonic have announced an agreement under which both companies will jointly develop Gallium nitride (GaN) devices based on Panasonic’s normally-off (enhancement mode) GaN on silicon transistor structure integrated into Infineon’s SMD packages. In this context Panasonic has provided Infineon with a license of its normally-off GaN transistor structure.