Search results for "transistor"
DC/DC converters suit rail & automotive applications
MTM power has released a set of primary switched DC/DC converters, PCMDS80,designed specifically for applications in rail and automotive, but also suitable for use in industrial and telecomms applications. They are available with 80W output power and operate according to the single transistor forward converter topology with a frequency of 50kHz.
Transistors & rectifiers exhibit high temperature performance
GeneSiC has announced a line of compact, high temperature SiC Junction Transistors (SJTs) and a line of rectifiers in TO-46 metal cans. These discrete components are designed to operate at temperatures of over 225°C. The use of high voltage, low RDS(ON)SiC Transistors and Rectifiers will reduce the size and weight of electronics applications requiring higher power handling at elevated temperatures.
O-S-D sales reach an all-time high of $63.8bn
According to IC Insights’ 2015 O-S-D report, titled A Market Analysis and Forecast for Optoelectronics, Sensors/Actuators, and Discretes, worldwide sales of optoelectronics, sensors, actuators and discrete semiconductors have increased 9% to reach an all-time high of $63.8bn after rising just 1% in 2012 and 2013.Modest gains in the global economy, steady increases in electronic systems production and higher unit demand in 2014 drove a stron...
Isolated gate driver operates from 175 to 225°C
Aimed at high density power converters, motor drives and actuators based on either fast switching SiC transistors, traditional power MOSFETs or IGBTs, the HADES v2 isolated gate driver has been released by CISSOID.Suitable for the aeronautics, automotive, industrial and oil & gas markets, the device integrates all of the necessary functions to drive the gates of power switches in an isolated, high voltage half bridge.
Motor drive analysers based on eight channel oscilloscope
Teledyne LeCroy’s MDA800 Series of Motor Drive Analysers (MDAs) combine three-phase power analyser static (steady-state) calculations, unique dynamic three-phase power and mechanical motor analysis capabilities, as well as high bandwidth (1 GHz) embedded control system debug in a single instrument.
Integrity tool targets high-speed PCB designs
A Signal Integrity/Power Integrity (SI/PI) product, developed for high-speed PCB designs, has been released by Mentor Graphics. The HyperLynx addresses high-speed systems design problems throughout the design flow, starting at the earliest architectural stages through to post-layout verification.
Characterisation reference flow enables accurate 14nm logic libraries
Cadence and Intel have announced a 14nm library characterisation reference flow for customers of Intel Custom Foundry, continuing their collaboration on enabling digital and custom/analogue flows for the Intel 14nm platform. The library characterisation reference flow is centered on the Cadence Virtuoso Liberate Characterisation solution and Spectre Circuit Simulator and enables accurate 14nm logic libraries.
Topside cooling eases GaN component integration
GaN Systems has added a topside cooling technology to its wide range of high-power enhancement-mode devices. Topside cooling enables engineers to use conventional, well-understood PCB cooling techniques when incorporating GaN Systems’ semiconductors into designs for products such as inverters, UPS, EVs, HEVs, high voltage DC-DC conversion and consumer products such as TVs.
APEC to host “wide bandgap semiconductors in power electronics” debate
GaN Systems is participating in what promises to be a lively debate on one of the hottest topics at APEC 2015. Wide Bandgap Semiconductor devices in Power Electronics – Who, What, Where, When and Why?will be hosted and led by Kevin Parmeter, Vice President of Applications, Excelsys, and will see panellists from device manufacturers joining power electronics design engineers to air their views.
600V GaN cascode transistors provide efficiency & power density
ON Semiconductorand Transphorm have announced theNTP8G202N(TPH3202PS) andNTP8G206N (TPH3206PS) 600V GaN cascode transistors and a 240W reference design that utilises them.With typical RDS(ON)values of 150 and 290mΩ, the products are offered in a TO-220 package for easy integration with existing PCB manufacturing capabilities.Both products have been qualified to JEDEC standards and are in mass production.