Search results for "transistor"
ZnO heterostructures yield GaAs-style quantum phase
Heterointerfaces composed of dissimilar materials have been applied to functional devices such as transistors and LEDs. In particular, the best-quality electron system is formed in gallium arsenide heterostructures, where a unique quantum phase was found at low temperature about 30 years ago,the characteristics of which have yet to be clarified.
Printable, wearable temperature sensor provides fever alerts
The device, developed by research groups lead by Professor Takayasu Sakurai, Institute of Industrial Science,and Professor Takao Someya, Graduate School of Engineering, bothUniversity of Tokyo, combines a flexible amorphous silicon solar panel, piezoelectric speaker, temperature sensor, and power supply circuit created with organic components in a single flexible, wearable package.
Thermal interface materials to reach $3.7bn by 2015
Recent research, conducted by IDTechEx, finds that the Thermal Interface Materials market (TIM), including tapes, adhesives, greases, gels, pastes, elastomeric pads, phase change materials, graphite, solders, compressible materials and liquid metals, will grow from $1.7bn in 2015 to $3.7bn in 2025. Most growth is due to elastomeric pads, phase change materials and solders. Full details of the analysis is available in the IDTechEx Research report ...
GaAs pHEMTprocess technology provides higher gain/bandwidth
A GaAs(Gallium Arsenide) pHEMT (pseudomorphic high electron mobility transistor) process technology, which provides higher gain/bandwidth and lower power consumption than competing semiconductor processes, has been introduced by Qorvo. The TQPHT09 is a 90nm pHEMT process that supports the company’s next-gen optical product portfolio. This process is suitable for next-gen high frequency, high performance amplifiers required for 100G+ linear ...
Is SiC key to high power semiconductor technology?
Ewan Ramsay, Principal Engineer, Raytheon UK, explains why SiC (Silicon Carbide) holds the key to high power semiconductor technology and how it can help push electronics further into harsh environments.
MAZeT devises a redesign strategy for ASICs
To address the discontinuation of ASIC components, MAZeT has devised a redesign strategy for digital and mixed-signal devices. The new ASIC will be compatible with the original ASIC, both in terms of its functionality and connection options.
Cree announces large signal model accuracy
Cree has released an application note describing the accuracy of its large signal models for RF power transistors, which allow RF design engineers to reduce PA design iterations, design time and development costs.
Design tools achieve TSMC certification for 10nm FinFET
Cadence Design Systems has announced that its digital and custom/analogue tools have achieved certification from TSMC for its most current version of 10nm FinFET Design Rule Manual (DRM) and SPICE models.The custom/analogue and digital implementation and signoff tools have been certified by TSMC on high-performance reference designs in order to provide customers with the fastest path to design closure on the 10nm FinFET process.
Why the microWatt/MHz MCU is the low-energy king
In the world of the low-energy application, the microWatt/MHz MCU is king. By Philip Ling, Editor, ES Design magazine.
GaN platforms are enhancement mode & cascode configured
Infineon Technologies has announced the expansion of its Gallium Nitride (GaN)-on-Silicon technology and product portfolio. The company now offers both enhancement mode and cascode configuration GaN-based platforms optimised for high performance applications requiring superior levels of energy efficiency including Switch Mode Power Supplies (SMPS) used in servers and telecomms, and consumer goods such as Class D Audio systems. GaN technology sign...