Search results for "transistor"
Chipset reduces passive component count by 40%
Designed to drive market availability of normally-on (JFET, MESFET) as well as normally-off (MOSFET) transistors, the XTR26020 chipset has been introduced by X-REL Semiconductor. This 2nd gen driver is 25% smaller than the XTR260010 chipset and reduces the quantity of required passive components by 40%. The device has led to a first-ever compact half bridge solution by X-REL.
Parasitic extraction platform minimises IC design guesswork
With its Calibre xACT parasitic extraction platform, Mentor Graphics addresses a wide spectrum of analogue and digital extraction needs, including 14nm FinFET, while minimising guesswork and setup efforts for IC designers. The Calibre xACT platform combines accuracy and TurnAround Time (TAT) by automatically optimising extraction techniques for specific process nodes, applications, design sizes and extraction objectives.
Sensorless motor driver controller on display at PCIM
ON Semiconductor will be showcasing some of its latest advances in power management technology at PCIM 2015, including compact IPMs, significant developments in GaN, and a sensorless motor driver controller.
Meet the transient power challenge
It is possible to use mix and match power components to create customised units that are adaptable to a range of energy sources and load requirements while optimising the power sub-system for size, weight, and power, agues Chester Firek, Vicor.
Global graphene value chain to be enhanced
FlexEnable has announced its participation in the Graphene Flagship, the EU’s 'biggest' initiative in the field of graphene and related materials. The company has a track record of groundbreaking graphene innovation and industrialisation. Last year the company successfully demonstrated a truly flexible display based on a transparent graphene conductor, which was integrated into its flexible transistor array.
DMOS FET technology cuts power loss by up to 40%
Toshiba Electronics Europe has launched a new generation of highly efficient transistor arrays based on double diffused MOSFET (DMOS FET) technology. The TBD62xxxA series is both function-compatible and pin-compatible with the company’s TD62xxxA series of bipolar transistor arrays, which have found wide use in applications including motors, relays and LED drives.
13.9cm2/V·s FET mobility achieved by liquid crystals
Researchers at Tokyo Institute of Technology and the Japan Science and Technology Agency have designed a liquid crystal molecule that produces high-performance organic field effect transistors with good temperature resilience and relatively low device variability, in addition to high mobility.
Printed electronics will experience a CAGR of 8.6%
By Raghu Das The printed electronics sector has been fascinating to follow and report on. Several billion dollar industries such as OLED displays already exist but the OLEDs today are not printed. OLED displays alone exceeded $16bn in sales last year, driven by the need to differentiate in the tight margin LCD business. By revenue, the second largest sector is the printing of sensors. In 2014, the glucose test strip market accounted $6.4bn, whil...
High gain, ruggedness feature in power transistor
A 650 W gallium nitride (GaN) on silicon carbide (SiC) HEMT pulsed power transistor for L-band pulsed avionics applications has been introduced by MACOM. This transistor is available in standard flange or earless flange packaging. The MAGX-000912-650L00/MAGX-000912-650L0S is a gold metallised, internally matched, GaN on SiC depletion mode RF power transistor.
600V GaN transistor is 'industry's first' in TO-247 package
From APEC 2015, Transphorm has announced that it is now offering engineering samples of its TPH3205WS transistor, the first 600V GaN transistor in an TO-247 package. Offering resistance of 63 mΩ and 34A ratings, the device utilises the company’s Quiet Tab source-tab connection design, which reduces EMI at high dv/dt to enable low switching loss and high-speed operation in power supply and inverter applications.