Search results for "SiC"
Ceramic GaN on SiC RF power transistor for avionics
M/A-COM Technology Solutions introduce a new ceramic GaN on SiC HEMT Power Transistor for avionics applications. The MAGX-001090-600L00 is a gold-metalized, matched GaN on Silicon Carbide, RF power transistor optimized for pulsed avionics applications, such as secondary surveillance radar in air traffic control systems.
“Emergence Of Low Price LED Solutions Are Pushing Technology Adoption Toward General Lighting”
Yole Développement is pleased to announce the third edition of one of its best seller: Status of the LED Industry. In this 2013 edition, Yole Développement mixes technical analysis, market trends, forecasts, geographical analysis...and much more! With a first part dedicated to general lighting, and a second one focused on other applications, discover the different format of the report and choose the part you need!
New Semiconductors Will Drive Future Power Electronics In Electric & Hybrid Vehicles – Gan Systems Presents On Gallium Nitride Devices
GaN Systems Inc, a leading developer of gallium nitride power switching semiconductors, is presenting a paper on new wide-bandgap semiconductors and their role in transforming automotive power electronics at the Electric & Hybrid Vehicle Conference & Expo in Michigan 17 - 19 September. Manufacturers are currently designing vehicles to be launched onto the market in 2018, coinciding with the timeframe leading forecasters are predicting tha...
High power SiC diodes offer excellent switching performance
IXYS has today announced the launch of two new series of high power Silicon Carbide diodes. The SS150 and SS275 Series feature three diode configurations to provide designers with flexible connection and layout options. Providing excellent switching performance, the SS150 and SS275 Series high power Silicon Carbide diodes are packaged in IXYS' low inductance, surface mount DE Series package.
Fairchild power solutions demo at Electronica India 2013
Fairchild Semiconductor has today announced that it will be exhibiting at Electronica India 2013, 4-6 September 2013, in booth 7E42 (Hall 7E) in Pragati Maidan, New Delhi, India. At the show next month, Fairchild invites designers and engineers to share their design challenges while learning more about the energy efficient, easy-to-use power solutions showcased during the event. Electronica India is one of largest electronic tradeshows in India c...
Cree SiC MOSFETs offer 21% reduction in power losses for Delta Elektronika
Cree has today revealed that its newly expanded portfolio of 1200 V SiC MOSFETs are being incorporated into the latest advanced power supplies from Delta Elektronika. Delta Elektronika demonstrated a 21 percent decrease in overall power supply losses and a reduction in component count by up to 45 percent when compared to power supply products using traditional silicon technology.
GaN Systems to present gallium nitride transistor development paper
GaN Systems has today announced that a team of its experts on gallium nitride technologies will present a major conference paper at the 224th ECS Electrochemical Energy Summit (San Francisco, California October 27 – November 1). Authored by Tom MacElwee, John Roberts, Hughes Lafontaine, I. Scott, Greg Klowak, and Lyubov Yushyna, the “Characterisations and performance of D-Mode GaN HEMT transistor used in a cascode configuration”...
Nihon Superior will appear at NEPCON to address Soldering challenges
Nihon Superior will showcase in Stand 2B20 at NEPCON South China 2013, scheduled to take place August 27-29, 2013 at the Shenzhen Convention & Exhibition Center in China. Company representatives will showcase a range newly developed products that offer solutions for some of the challenges the electronics industry is now facing, including lead-free die attach, void minimization, environmental protection, and process yields.
Texas Instruments announces “STEM Behind Hollywood” program
There's a lot more behind Hollywood magic than smoke and mirrors – popular movie and TV shows about zombies, superheroes, spaceships and true crime only come to life because of science, technology, engineering and maths (STEM). That's why TI is launching "STEM Behind Hollywood," an exciting new education program developed with assistance from The Science & Entertainment Exchange, a program of the National Academy of Sciences, as well as...
Nexans awarded contracts worth 20 million Euros
Nexans has gained contracts worth a total of over Euros 20 million to design, manufacture and install Extra High Voltage cable systems for two of Europe’s leading Transmission System Operators – Terna of Italy and Amprion of Germany. Terna Rete Italia’s new 380 kV project is aimed at improving the quality of the electricity network serving South-Eastern Sicily, especially as electricity production in this area increases both through convent...