Search results for "SiC"

In its latest technology & market analysis, titled “SiC Market”, Yole Développement identifies two scenarios for SiC industry evolution: “The optimistic scenario will see SiC devices used commercially in EV/HEV from 2015 onwards, taking 11% of the market from silicon IGBT devices by 2020”, explains Dr. Philippe Roussel, Business Unit Manager, Power Electronics & Compound Semi at Yole Développement. “In the pessimistic scenario, EV/HEV...

With the new OD Mini short range distance sensor, SICK has delivered one of the world’s most lightweight and precise displacement sensors incorporating an easy-to-use display and control. The SICK OD Mini achieves micron resolution and millisecond responsiveness in a rugged, compact and lightweight unit making it ideal for precision measurement and positioning applications where high levels of accuracy are demanded, especially at high speeds, f...

Toshiba Electronics Europe (TEE) has announced a hybrid N-channel IEGT (Injection-Enhanced Gate Transistor) module that features an embedded silicon carbide (SiC) fast recovery diode (FRD). The high-efficiency PMI (Plastic case Module IEGT) will help designers to save energy, space and weight in high-power switching, inverter and motor control applications.

Cree is introducing the industry’s first commercially available silicon-carbide six-pack power module in an industry-standard 45-mm package. When replacing a silicon module with equivalent ratings, Cree’s six-pack module can reduce power losses by 75 percent, which leads to an immediate 70 percent reduction in the size of the heat sink or a 50 percent increase in power density.

Cree has introduced the industry's first commercially available silicon carbide (SiC) six-pack power module in an industry standard 45mm package. When replacing a silicon module with equivalent ratings, Cree's six-pack module can reduce power losses by 75 percent, which leads to an immediate 70 percent reduction in the size of the heat sink or a 50 percent increase in power density.

Yole Développement announces its SiC Market 2013: Technology and Market for SiC Wafers, Devices and Power Modules report. Yole Développement’s report focused on the entire value-chain, covers all SiC applications in low, medium and high power ranges and provides all metrics up to 2020. It also includes a Bill-of-Material analysis, to compare Silicon vs. SiC-based system costs, and a cost reduction roadmap for SiC devices.

M/A-COM Technology Solutions introduced today a new market leading GaN on SiC HEMT Power Transistor for L-Band pulsed radar applications. The MAGX-001214-500L00 is a gold-metalized pre-matched GaN on Silicon Carbide transistor optimized for pulsed L-Band radar applications.

SICK has extended the communications capability of its programmable Ethernet AFS60 single-turn and AFM60 multi-turn encoders with the addition of PROFINET and EtherCAT protocol compatibility. The Sick AFS60/AFM60 absolute encoders deliver production control and plant availability essential to the fine control of automated and rotating axis machinery.

SICK has developed a new vision sensor with dimension verification, position detection and intelligent measurement capability that challenges 2D smart camera performance. The Inspector PIM60 will support a wide range of high-speed quality inspection, picking and assembly applications while still offering the ease-of-use and attractive price of a vision sensor.

Avago Technologies today unveiled two new sets of high speed gate drive optocoupler devices, the ACPL-P/W345 and ACPL-P/W346. These devices are 1A and 2.5A gate drive optocouplers designed to protect and drive Power MOSFET and Silicon Carbide (SiC) MOSFET for high switching frequency applications such as inverter, motor control, and switching power supply (SPS). Compared to Avago’s previous generation devices, the ACPL-P/W345 and ACPL-P/W346 ar...