Search results for "SiC"

ROHM has developed surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by increasing the creepage distance between terminals.

Toshiba has developed new 1200V silicon carbide (SiC) MOSFETs with low on-resistance (RDS(ON)) and high levels of reliability.

Navitas Semiconductor has announced the world’s first 8.5kW power supply unit (PSU), powered byGaN and SiC technologiesto achieve 98% efficiency, for next-generation AI and hyperscale data centres.

Sanan Semiconductor recently announced the expansion of its SiC power product portfolio with the introduction of 1700V and 2000V devices. These cutting-edge components are set to revolutionise power efficiency in applications ranging from renewable energy to electric vehicle charging infrastructure.

Navitas has announced it will preview several breakthroughs at electronica 2024 (Hall C 3, booth 129, November 12th- 15th).

ROHM Semiconductor’s SCS210ANHRTRL, SCS210KNHRTRL, SCS220ANHRTRL, and SCS230ANHRTRL are state-of-the-art silicon carbide (SiC) Schottky diodes designed to meet the demanding requirements of modern automotive and industrial applications.

Littelfuse, Inc. announced the SMFA Asymmetrical Series Surface-Mount TVS diode, the first-to-market asymmetrical TVS solution specifically designed to protectsilicon carbide(SiC) MOSFET gates from overvoltage events.

CISSOID has announced that its SiC Inverter Control Module (ICM) has been adopted by Hydro Leduc for its new highly efficient and modular Electric Power Take-Off (ePTO).

With SiC and GaN continuing their meteoric rise, how might these technologies impact the EV market going forward.

Toshiba Electronics Europe has expanded its silicon carbide (SiC) diode range with the introduction of ten new 1200V Schottky barrier diodes (SBDs) in the TRSxxx120Hx series.