Search results for "SiC"

Keithley Instruments has upgraded its S530 Parametric Test Systems. A new GUI-driven tool expands diagnostic coverage for all system instrumentation and matrix pathways, providing greater confidence in the health of the system. Additionally, users can run the system verification tool to ensure the S530 is within its published system specifications.

Plextek release a video tutorial on the design of GaN power amplifier monolithic microwave integrated circuits for use in 15GHz point to point microwave links, using Agilent's ADS software, and Cree's 0.25um GaN on SiC process. Emphasis is on designing GaN PAs for high linearity, rather than just saturated power. The resulting MMIC layout is somewhat smaller than commercially available GaAs die offering comparable performance.

IDTechEx have forecasted that the total global gross value market for hybrid and pure electric vehicles will reach $334 Billion (USD) within the decade. Nearly always purchased based on the total cost of ownership rather than up-front price, IDTechEx expects this to consist primarily of large or very heavy duty military, industrial and commercial vehicles split evenly between on-road and off-road types. The multi-billion dollar marine sector is e...

Texas Instruments has announced the release of the UCC28180 8-pin power factor correction controller. Featuring the industry's widest range programmable frequency operating in continuous conduction mode, the UCC28180 delivers power factor correction greater than 0.95 and also cuts power consumption in half, compared to existing solutions.

Tektronix has introduced oscilloscopes offering bandwidth up to 2GHz with 10GS/s sample rate and 50M standard record length. The MSO/DPO5000B Series also feature, up to 250M record length, 250,000 waveform per second capture rate, and >11 bits resolution with HiRes acquisition.

Toshiba has today announced the extension of its family of 650V silicon carbide Schottky Barrier Diodes with the introduction of 6, 8 and 10A devices, in addition to the 12A SBD that entered volume production earlier in 2013. Toshiba is aiming to address forecasted growth in the SiC power device market with its new offerings.

Yole Développement has today introduced a new report, titled "Free-Standing & Bulk GaN Substrates for Laser Diode, LED and Power Electronics". Aside from giving a detailed overview of the GaN industry, Yole Développement’s new report provides a detailed analysis of the GaN use for Laser diode, LED and power electronic applications.

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Microsemi expands its silicon carbide Schottky product family with a new line of 650 volt solutions targeted at high-power industrial applications including solar inverters. Wide bandgap semiconductors such as SiC feature the most advanced material that is being considered by many power electronics and systems designers in their new designs.

Showa Denko will next month launch silicon carbide (SiC) epitaxial wafers with a diameter of six inches (150mm) - the largest size currently available on the world market - for use in power devices. The company will also start selling next month a new grade of four-inch (100mm) SiC epitaxial wafers with fewer defects and higher uniformity.