Search results for "SiC"

PCIM Europe 2014 feature a diverse conference program: from a total of 269 abstracts, the conference directors have put together a comprehensive program covering the latest technological trends in power electronics components and systems.

Anintelligent power driver for SiC, GaN and silicon power switches has been announced with the company, X-REL Semiconductor, claiming the device is the industry's first power switch driver able to operate at extreme temperatures. Themonolithic, isolated, intelligent power driver is targeted atmotor drive, power conversion and high-voltage communication applications.

A 2D material with exceptional properties, graphene is the focus of Yole Développement's latest report: "Graphene materials for opto & electronic applications". With properties including ultrahigh electrical and thermal conductivities, wide-range optical transmittance and excellent mechanical strength and flexibility, graphene is a promising material for emerging and existing applications in printed & flexible circuitry, ultrafast ...

Designed for L-Band pulsed radar applications, theMAGX-000912-500L00 from M/A-COM is a GaN on SiC HEMT Power Transistor. The gold-metalized transistor has been optimised for pulsed avionics and radar applications.

Richardson RFPD has published a new Silicon Carbide (SiC) Products Brochure featuring the latest products from Cree, Microsemi, Powerex and Vincotech. The 8-page quick reference guide highlights SiC Schottky diodes (600V, 650V, 1200V and 1700V, 1A – 60A), SiC MOSFETs (1200V and 1700V), full SiC modules (1200V, up to 270A) and Si/SiC hybrid modules (600V – 1200V, up to 116A).

At the 4th CS International Conference in Germany, delegates will have the opportunity to listen to six key themes and 36 presentations including leading market analysts in the compound semiconductor sector, plus representatives of many of the biggest III-V foundries in the world.

Driving high efficiency Silicon Carbide (SiC) and traditional silicon power switches, HADES is a 2nd generation isolated gate driver chipset. CISSOID's latest offering aims to maximise the benefits of the newest Silicon Carbide (SiC) power switches. To accomplish this, increased switching frequencies translate into dramatic reduction of the size & weight of the passive & magnetic components; while faster switching times lead to increased ...

Tektronix is expanding its family of precision power analysers with the introduction of the PA1000 single-phase power analyser. The company is positioning itself to take advantage of the burgeoning power inverter market which Curt Willener, general manager, Power Analyser Product Line, Tektronix suggested could be worth £70bn by 2020. The analyser is available now from Tektronix distributors including Farnell element14 and RS Components.

Tektronix a annoncé aujourd'hui l'extension de sa gamme d'analyseurs de puissance de précision avec l'introduction de l'analyseur de puissance monophasé PA1000. Avec sa conception Spiral Shunt en instance d'obtention de brevet, le PA1000 offre aux ingénieurs qui conçoivent et testent les alimentations électriques, les produits d'électronique grand public et autres, des mesures de puissance pr&eacut...

Richardson RFPD has announced availability and full design support capabilities for four new 650V Silicon Carbide (SiC) Schottky diodes from Microsemi. The new devices are the latest addition to Microsemi's SiC Schottky product family.