Search results for "SiC"

Cree has claimed to have shattered the on-resistance barrier of traditional 1200V MOSFET technology by introducing the industry’s first commercially available silicon carbide (SiC) 1200V MOSFET with an RDS(ON) of 25mΩ in an industry standard TO-247-3 package. The C2M0025120D MOSFET is expected to be widely adopted in PV inverters, high voltage DC/DC converters, induction heating systems, EV charging systems, and medical CT application...

AEC-Q100 qualified for automotive applications, Texas Instruments has claimed that the UCC275xx-Q1 family of single- and dual-channel gate drivers features the industry’s fastest propagation delays of less than 15ns. The ultra-low propagation delays in the gate drivers help automotive systems efficiently switch power electronics at high frequencies to maintain a small footprint and reduce overall vehicle weight.

At PCIM Europe 2014, due to be heldat the Nuremberg Exhibition Center, Nuremberg, Germany,International Rectifier will exhibit their latestpower management solutions.IR engineering and technical sales staff will demonstrate IR’s latest energy-saving and high power density enabling technologies and products at the IR booth, Hall 9, Stand 413.

ADual IGBT Gate Driver, featuring two high current outputs, has been announced by IXYS. TheIX2204 driver'shigh current outputs arecapable of sourcing 2A and sinking 4A. Manufactured on IXYS ICD's advanced BCDMOS Silicon on Insulator (SOI) process, the IX2204 outputs have a wide operation voltage range of -10V to +26V.

At PCIM 2014, inHall 9, Booth 211, ROHM Semiconductorwill present its latest power management product designs. The products on show offerbeneficial characteristics resulting from latest material research, packaging and manufacturing expertise and meet the ever increasing demand for energy efficiency, miniaturization, durability, reduced component count and costs while providing optimum performance at the same time.

Believed to be the industry’s first commercially available family of 50A SiC rectifiers, Cree has announced the CPW5 Z-Rec high-power SiC Schottky diodes. The diodes are suitable for use in high power systems from 50kW to over 1MW, addressing applications such as solar / PV inverters, industrial power supplies, induction heating, battery charging stations, wind turbine converters and traction inverters.

EpiGaN announced that Dr. Marianne Germain, CEO and co-Founder, will deliver a presentation at the CS International Conference 2014 in Frankfurt, Germany. Entitled “Industrial manufacturing of GaN epiwafers for High Voltage and RF markets”, the presentation will detail how an industrial material source of GaN epiwafers, truly enabling expected device performance, is required, as the GaN electronics market is predicted to significantly...

The MAGX-000035-01000P is the latest addition to the GaN in Plastic series from M/A-COM. The device is a 10W GaN on SiC unmatched power transistor, which offers broad RF frequency capability, reliable high voltage operation, and smallest footprint in plastic-packaging technology.

Firmly establishing the company at the forefront of GaN (Gallium Nitride) technology, Transphorm has announced that it will present two “Industry Sessions” presentations at APEC 2014. At last year’s APEC show, Transphorm introduced what they believe to be the first and only 600V JEDEC-qualified GaN-on-Silicon HEMTs (high electron mobility transistors).

MACOM announced a new GaN on SiC HEMT Power Transistor for pulsed power applications.