Search results for "SiC"

GaN and Silicon really shouldn’t go together but several companies are making it work in order to reap the cost benefits, as Sally Ward-Foxton reports.

Agilent Technologies has developed a power device capacitance analyser that automatically characterises power device junction capacitances using real operating voltages. With the increasing use of power devices fabricated from emerging materials like SiC and GaN, switching power supplies are now operating at increasingly higher frequencies.

New semiconductor materials could mean 50% less energy loss in switched-mode power supplies for PCs, flat-screen televisions, servers and telecommunications systems and could make solar inverters even more compact and cost-efficient. The partner companies of the research project “NeuLand” have developed highly-integrated components and electronic circuits which made it possible to reduce energy loss in circuits by 35% as early as duri...

IDTechEx finds that the global sale of hybrid and pure electric cars will triple to $178.9 billion in 2024 as they are transformed in most respects. Up-to-date ten year forecasts are provided in this new IDTechEx report, "Hybrid and Pure Electric Cars 2014-2024" - unique in revealing how everything about such cars is being reinvented.

ROHM Semiconductor as a leading provider of reliable SiC technology offers a full line up of high reliable, high efficient 2nd generation SiC Power Devices for use in fast switching, high temperature and high voltage devices.

Designed for high-power industrial applications where efficiency is critical, Microsemi has introduced its silicon carbide (SiC) MOSFET product family with 1200V solutions. Typical applications for the APT40SM120B, APT40SM120J, APT50SM120B and APT50SM120J include solutions for solar inverters, electric vehicles, welding and medical devices.

Mitsubishi Electric used the PCIM exhibition in Nuremberg to launch hybrid silicon carbide (SiC) power semiconductor modules for high-frequency switching applications. These latest additions to the NFH series of power semiconductor modules enable design engineers to reduce electric power losses by 40%.

PCIM 2014: Wide-band screened CWT Mini Rogowski current probes from Power Electronic Measurements (PEM) use electrostatic screening strategy to enhance accuracy in the presence of large electrostatic interference signals. The shielding technique uses a low sensitivity coil and patented low-noise signal-conditioning circuitry.

Expanding the company's Z-Rec Schottky diode portfolio, Cree announces two discrete 650V SiC rectifiers. The C5D50065D and CVFD20065A deliver ultrafast switching frequencies, higher efficiencies, improved thermal characteristics, enhanced reliability, simplified circuit design, and reduced costs to power electronic systems.

Packaged in industry-standard 62mm housing, the CAS300M12BM2 300A, 1.2kV half-bridge module has been introduced by Cree. This silicon-carbide (SiC) module reduces energy loss due to switching by more than five times compared to the equivalent silicon solution, according to Cree. The company has also claimed that this best-in-class efficiency enables for the first time all-SiC high power converters rated up to the megawatt level.