Search results for "SiC"

CLEAR packaging and films are dream materials for food and FMCG manufacturers, but ever-more transparent and reflective packaging can pose nightmares for the production engineers tasked with detecting them accurately and reliably with optical sensors.

At SMTA International, September 30th to October 1st in Illinois, USA, Nihon Superiorwill exhibit in Booth #410. The company will have representatives showcasing a range of product solutions for current challenges faced by the electronics industry, including lead-free die attach, void minimisation, environmental protection and process yields.

Designed for civilian and military radar pulsed applications, M/A-COM Technology Solutions has introduced two GaN on SiC HEMT RF power transistors. The MAGX-000035-015000 and MAGX-000035-01500S transistors provide 17W peak output power (typical) with 15.5dB power gain and 63% efficiency.

Delivering currents in excess of 60A per phase, a family of integrated DrMOS power stages has been announced by Vishay Intertechnology. TheSiC620 power stages integrate high- and low-side TrenchFET Gen IV n-channel MOSFETs (which are claimed to offer industry-benchmark on-resistance), an advanced MOSFET driver IC and a bootstrap Schottky diode.

GaN devices for power electronics are on the verge of big growth, but what are the driving forces behind this growth? Sally Ward-Foxton investigates for ES Design magazine.

A power transitor, optimised for L-Band radar applications, has been introduced by M/A-COM Technology Solutions. The MAGX-001214-650L00 is a gold-metalized, pre-matched, GaN SiC HEMT tranistor which the company claims offers the highest peak power in the industry for pulsed L-Band radar applications.

A 3D camera solution, designed to make vision-guided robot picking applicationsmore productive and cost-effective, has been introduced by SICK UK. The ScanningRuler’s large field of view enables accurate 3D imaging of stationary objects, boosting the productivity of high-throughput robotics applications and making it easier for robot integrators to achieve volume picking in heavy industrial applications.

Richardson RFPD is now offering availability and full design support capabilities for a new silicon carbide power Z-FET from Cree. The C2M0040120D is a 1200V, 40mOhm RDS(on) SiC MOSFET that features N-channel enhancement mode and is available in a TO-247-3 package. Benefits of the device include higher system efficiency, reduced cooling requirements, and increased system switching frequency and reliability.

Silicon carbide (SiC) devices have the potential to unlock significant performance and efficiency improvements in applications ranging from rail traction to renewable energy generation. This paper describes how the introduction of hybrid technologies that combine these performance and efficiency advantages with the high-power handling capabilities of silicon injection-enhanced gate transistors (IEGTs) is providing engineers with an effective way ...

A range of materials grown using CVD (chemical vapour deposition) processes has been introduced by Morgan Advanced Materials. Morgan's CVD SiC (Silicon Carbide) and PBN (Pyrolytic Boron Nitride) are suitable for use insemiconductor applications such as rapid thermal processing and plasma etch process chamber components.The materials are also suited for use in metalorganic CVD tools for high-brightness white LED manufacturing, using the indium gal...