Search results for "SiC"

A new SPICE model introduced by Cree increases the design-in support for the C2M Series SiC MOSFET power devices and demonstrates the benefits of Cree SiC MOSFETs—including the new C2M0025120D device, which recently shattered the on-resistance barrier by delivering 1200V of blocking voltage with an on-resistance of only 25mOhms—in circuit simulations.

A 1.2kV all-SIC six pack module enables an increase in the power rating of inverters to 50 per cent while reducing power losses by 50 per cent to increase efficiency by 5 per cent. The device is based on Cree’s C2M SiC MOSFET and Z-Rec SiC Schottky diode technology. The all-SiC 1.2 kV, 20A six-pack features the industry’s lowest switching losses due to the zero turn-off tail current in the MOSFET and the zero reverse recovery current ...

Suitable for use in semiconductor applications, CVD SiC and PBN materials have been introduced by Morgan Advanced Materials. The applications in which the materials are suitable for includerapid thermal processing and plasma etch process chamber components. The materials can also be used asmetalorganic CVD tools for high-brightness white LED manufacturing using the indium gallium nitride process.

As the industry pushes forward to realise SiC’s full potential, Jochen Hüskens, Rohm Semiconductor, argues that the next generation of SiC power devices is well-positioned to enable new high-volume applications such as EVs and solid state transformers.

Vishay Intertechnology arrived at the electronica exhibition in Munich with a new family of VRPower integrated DrMOS power stage solutions in three PowerPAK package sizes to meet the various design challenges in high-power and high-performance multiphase POL applications. The SiC789 and the SiC788 are offered in the MLP66-40L with an Intel 4.0 DrMOS Standard (6 mm by 6 mm) footprint.

Silicon Carbide (SiC) propagates over all industrial segments, announces Yole Développement. Power factor corrector (PFC), photovoltaic inverter, motor control … and more represented a $100 million business in 2013.

Plextek RFI has published a whitepaper on the design of a 25W X-band Gallium Nitride (GaN) PA MMIC (Monolithic Microwave Integrated Circuit). This case study describes the design and performance of a 25W X-band GaN PA MMIC designed on WIN Semiconductor's 0.25μm GaN on SiC process.

Suitablefor rapid thermal processing and plasma etch process chamber components, Chemical Vapour Deposition (CVD) SiC and Pyrolytic Boron Nitride (PBN) materials have been introduced byMorgan Advanced Materials. The materials are also suitable as metalorganic CVD tools for high-brightness white LED manufacturing using the indium gallium nitride process.

The new SICK W2S family delivers powerful sub-miniature photoelectric positioning sensing for today’s most difficult packaging materials – even matt black. The slim housing allows convenient mounting within tight spaces demanded by compact machinery. The sensor’s cutting-edge photoelectric sensing promises production efficiency and reliability even with challenging objects to detect in electronics and solar panel assembly applic...

SiC MOSFETs, manufactured byCree, have been selected bySanix for use within its 9.9kW three-phase solar inverter. The 80Ω C2M0080120DMOSFETs will be utilised in the primary power conversion stage of the solar inverter, which is designedforuse in the construction of commercial photovoltaic systems in the Japanese solar energy market.