Search results for "SiC"
SiC & GaN power technologies to grow 30% annually
Used to convert and manage electricity in devices from mobile phones to pumps and motors, power electronics will be worth $23bn for discrete components in 2024. According to Lux Research, silicon-based devices will remain the main technology of choice, but SiC and GaN will be the fastest-growing at 30 and 32% annual rates, respectively, gaining a combined 13% share in 2024.
Low profile SMD-LEDs fit in tight spaces
The latest SMD-LEDs from Kingbright are designed to meet the demand for LEDs in small packages with ultra-low profiles. Kingbright’s KPG-1005, KPG-1608 and KPGA-1602 SMD-LED series are compact in size yet offer the luminosity of larger devices and suit many applications, including backlighting and indicator functions in keypads, keyboards, LCD screens, mobile phones and toys.
Power stage solutions address POL design challenges
To address design challenges in high-power and high-performance multiphase POL applications, Vishay Intertechnology has released a family of VRPower integrated DrMOS power stage solutions in three PowerPAK package sizes. The SiC789 and the SiC788 are offered in the MLP66-40L package with an Intel 4.0 DrMOS standard (6x6mm) footprint, while the SiC620 and the SiC620R are offered in the 5x5mm MLP55-31L package and the SiC521 is offered in the 4.5x3...
Design support offered for industry’s lowest loss switches
GeneSiC Semiconductor announces the availability of Gate Driver evaluation board and has expanded its design support for what it calls thethe industry’s lowest loss switches, the SiC Junction Transistor (SJT), with a fully-qualified LTSPICE IV model.Using the Gate Driver Board, power conversion circuit designers can verify the benefits of sub-15ns, temperature independent switching characteristics of SiC Junction Transistors, with low drive...
Compact silicon carbide diodes enable on-board EV charging
STMicroelectronics has revealed itsautomotive-qualified silicon carbide (SiC) diodesfor advanced On-board Battery Chargers (OBCs) in EVs such as Plug-in Hybrids (PHEVs) that demand high power-handing capability within a confined space.These diodes allow designers to build smaller power modules, beneficial for automotive applications and suitable for tackling the Little Box Challenge presented by Google and IEEE.
GaN Systems offers its devices for $1m Little Box Challenge
GaN Systems isoffering its devices to contestants entering the Little Box Challenge launched by Google and the IEEE. Thisis an open competition with a $1m prize for the team who can build the smallest, highest power density kW-scale inverter – at least 50W per cubic inch. Size-wise, the goal for competitors is to shrink an inverter from the size of a picnic cooler down to something smaller than a laptop computer.
SICK Profiler 2 Keeps a Low Profile for High Quality Inspection
SICK has introduced the Profiler 2, a short range distance sensor for accurate measurement of 2D profiles, shapes and surfaces that combines a high-performance resolution of 2 microns with a wide measurement range.
CeraLink – a compact solution for converters
TDK Corporation presents a new generation of the EPCOS CeraLink, a highly compact solution for the snubber and DC links of fast-switching converters based on SiC and GaN semiconductors. These new capacitors are based on the ceramic material PLZT (lead lanthanum zirconate titanate). In contrast to conventional ceramic capacitors, CeraLink has its maximum capacitance at the application voltage, and this even increases proportionately to the share o...
SiC MOSFET suited for boost converters
Richardson RFPD is offering the new 1200V, 32A, 80mΩ SiC MOSFET from Microsemi with full design support capabilities. The APT40SM120J is built on Microsemi's patented SiC MOSFET technology, which features best-in-class RDS(on) vs. temperature. It also features ultra-low gate resistance for minimising switching energy loss, superior maximum switching frequency, and outstanding ruggedness with superior short circuit withstand.
IGBT package improves power density & reduces system costs
Addressing the need for increased power density and space saving in applications requiring high efficiency, Infineon Technologies has released a variant of the TO-247 package. The TO-247 4 Kelvin-Sense package provides efficiency levels previously unavailable when used together with the company’s TRENCHSTOP 5 IGBT and Rapid diode technologies.