Search results for "SiC"

Addressing demand for components with a nominal voltage rating slightly higher than 600V,Cree has expanded its SiC Schottky diode portfolio with the addition of four 650V diodes. The Cree Z-Rec diodes, automotive qualified to AEC-Q101, enable high efficiency power systems with improved reliability, simplicity, and total cost.

According to Yole Développement, Wide Band Gap (WBG) technologies are almost ready to be used by power electronics integrators. The question is how? Industry players have identified many module packaging challenges. Yole has analysed their insights, and is now presenting an overview of the issues.

Working at heights is still one of the most dangerous activities throughout the EU. Badly maintained, positioned or secured ladders are the major reasons for falls from heights, as mentioned by the European Agency for Safety and Health at Work. Laddertag helps reduce falls caused by badly maintained ladders.Risk control Reducing and controlling the risks involved when working with ladders, is important for both employees and businesses. Falls fro...

With the launch of the PAC50, SICK is introducing a specially-developed pneumatic pressure sensor for improved air pressure monitoring with an at-a-glance display to provide clear warnings of crossing pressure thresholds within a target range.

Nihon Superior has announced that it will exhibit in Booth 739 at the IPC APEX EXPO, scheduled to take place 24th to 26th February 2015, at the San Diego Convention Centre, California. Company representatives will showcase the SN100C P506 D4 lead-free, no-clean solder paste and Alconano Nano-Silver paste.

Mouser Electronics is now stocking the PT62SCMDxx Dual SIC MOSFET Driver Boards from Cree. Designed to drive the CREE CAS300M17BM2 SIC MOSFET modules, the PT62SCMD12 and PT62SCMD17 single-board solutions are dual silicon carbide (SiC) MOSFET gate drivers optimised to ensure maximum performance for SiC modules.

According to Lux Research, GaN-on-Si wafer substrates will dominate the Gallium nitride (GaN) market for at least the next decade, growing to $1bn in 2024, a 90% share. GaN materials can create more efficient devices for electric power conversion in devices from cell phone chargers to HEVs, leading to a $1.1bn market for GaN discrete components in 2024.

STMicroelectronics has announced that its employees working in Catania (Sicily, Italy) can now buy a wide range of products for their families' needs online and pick them up on their way home at Coop Qui, the world's first fully automated on-site smart store operated by WIB Machine for COOP, the Italian retail-chain leader.

Providing all of the components needed to evaluate CreeMOSFET and Schottky diode performance in a configurable half bridge circuit, Cree has introduced a MOSFET design kit. Quick and easy to assemble and use, the design kit enables comparative testing between IGBTs and Cree MOSFETs, and provides an effective layout example for properly driving Cree MOSFETs with minimal ringing.

Integrating an N-channel IEGT (Injection-Enhanced Gate Transistor) and an SiC fast recovery diode, the MG1500FXF1US71 high-efficiency 3300V, 1500A power module has been introduced by Toshiba Electronics Europe.