Search results for "SiC"
Cree to speak at GOMACTech
Cree is exhibiting and speaking at this year’s GOMACTech (Government Microcircuit Applications and Critical Technology Conference), which will take place on the 23rd to 26th of March in St. Louis, Missouri.
Cree to speak at APEC conference
This yearat Applied Power Electronics Conference and Exposition (APEC), 15th to 19th March in North Carolina, Cree is exhibiting at booth #1417 and speaking at the conference. This year marks the 30th anniversary of the conference, which focuses on the practical and applied aspects of the power electronics business.
GaN & SiC power devices viable with targeted strategy, says report
Power electronics based on GaN and SiC have the potential to significantly improve efficiency. But since these materials are higher-cost, companies need market-specific strategies in order to succeed, as these Wide-BandGap (WBG) materials claim market share from silicon-based semiconductors, according toLux Research.
DOCSIS 3.0 solutions on display at CCBN 2015
At CCBN 2015, which takes place from 26th to 28th March in Beijing, China, STMicroelectronics will demonstrate its DOCSIS 3.0 solutions.
Large EVs are a bellwether for the future of cars
A report published by IDTechEx, which analyses the off-road, on-road, water and airborne EVs, is particularly useful for benchmarking new technology for EVs.The report, tilted, ‘Electric Vehicle Forecasts, Trends and Opportunities 2015-2025’, discusses how the types of energy harvesting used in EVs do not first appear in cars.
PCIM Asia 2015 publishes conference programme
The PCIM Asia 2015 international exhibition and conference for power electronics, intelligent motion, renewable energy and energy management will take place from 24th to 26th June in Shanghai. The focus is on power electronic components and systems and the special requirements for applications in China and Asia.
Optocouplers protect & drive SiC & GaN power devices
Avago hasannounced two sets of high speed gate drive optocoupler devices, the ACPL-P/W347 and ACPL-P/W349. These devices are 1.0A and 2.5A gate drive optocouplers designed to protect and drive fast switching next-gen power semiconductors like SiC and GaN MOSFETs and IGBTs in applications such as power inverters, motor drives, and switching power supplies.
Portfolio shown at embedded world includes FPGA, GaN & SiC discretes, PoE & reverse power feed
Microsemi has announced that it will demonstrate its ‘Securing the IoT’ solutions, along with FPGAs, GaN and SiC discretes, PoE, midspan, reverse power feed products and more at embedded world 2015. The company will showcase its portfolio of expertise and technology from 24th to 26th February, at Nuremberg's Exhibition Centre, in Hall 4, Stand 140.
Knives out for immortal combat
Two armour clad warriors face each other in the field of battle, armed to the teeth. One wields a sword, one a fearsome axe. Faces are hidden behind black, industrial grilles, reminiscent of Darth Vader's gruesome mask. The combatants take a step toward each other and pause. A bell sounds and the fighters launch themselves at one another, twirling in a capoeira-style flurry of strokes, before one lands a sickening blow... and the fight resumes.
SiC MOSFETs suit energy-conscious applications
Suited for energy-conscious applications such as inverters for EVs/HEVs, solar or wind power generation, high-efficiency drives, power supplies and smart-grid equipment, the SCT20N120 SiC power MOSFET has been introduced by STMicroelectronics.