Search results for "SiC"

Ewan Ramsay, Principal Engineer, Raytheon UK, explains why SiC (Silicon Carbide) holds the key to high power semiconductor technology and how it can help push electronics further into harsh environments.

Vishay Intertechnology has introduced a thin film bar MOS capacitor designed for use in high-power hybrid assemblies and SiC/GaN applications. The BRCP offers high power handling and operating voltage up to 100V in two compact case sizes measuring 3.048x0.889 and 6.096x0.889mm (0.12x0.035 and 0.24x0.035"), allowing for smaller product designs without sacrificing performance.

Cree has demonstrated that its SiC MOSFET and diode technologies enable previously unattainable levels of power density in string solar inverter products, yielding efficiencies greater than 99.1% at peak, at 20% of the average size and weight of today’s silicon-based inverter units.

By Dr Peter Harrop, Chairman, IDTechEx The IDTechEx report, titled Electric Motorcycles and Three Wheel Electric Vehicles 2015-2025, reveals gaps in the market as e-motorcycles and their three wheel derivatives become a multi-billion dollar market. One gap is the crossover between bikes and motorcycles created as a premium-priced product.

ROHM will present its latest power product designs at PCIM,Nuremberg, from 19thto 21stMay (Hall 9, Booth 316).Demand for high performance, power, reliability, cost and energy efficiency, as well as miniaturisation, puts stress on power device design. ROHM’s novelties offer beneficial characteristics and compact packaging solutions, based on the company’s R&D activities and micro fabrication technologies.

Aimed at high density power converters, motor drives and actuators based on either fast switching SiC transistors, traditional power MOSFETs or IGBTs, the HADES v2 isolated gate driver has been released by CISSOID.Suitable for the aeronautics, automotive, industrial and oil & gas markets, the device integrates all of the necessary functions to drive the gates of power switches in an isolated, high voltage half bridge.

Fukushima SiC Applied Engineering has selected ROHM’s SCT2080KE SiC MOSFET for use in its SiC-Pulser series of high voltage pulse generators.Pulse generators are used in a variety of applications, including high voltage accelerators, plasma generators and laser processing machines. Conventional systems utilise silicon devices or vacuum tubes as switching elements. However, this often entails a large number of system components which results...

The PCIM exhibition in Nuremberg (May 19-20) provides a platform for Power Electronic Measurements to demonstrate its full range of Rogowski technology based wide-bandwidth current probes. Featuring the latest CWT MiniHF, the company will show how this AC probe provides better common mode immunity to local high voltage transients, and provides a more precise measurement delay which can be compensated for to give improved power loss measurement in...

A 650 W gallium nitride (GaN) on silicon carbide (SiC) HEMT pulsed power transistor for L-band pulsed avionics applications has been introduced by MACOM. This transistor is available in standard flange or earless flange packaging. The MAGX-000912-650L00/MAGX-000912-650L0S is a gold metallised, internally matched, GaN on SiC depletion mode RF power transistor.

GeneSiC has announced a line of compact, high temperature SiC Junction Transistors (SJTs) and a line of rectifiers in TO-46 metal cans. These discrete components are designed to operate at temperatures of over 225°C. The use of high voltage, low RDS(ON)SiC Transistors and Rectifiers will reduce the size and weight of electronics applications requiring higher power handling at elevated temperatures.