Search results for "SiC"

A paper outlining the role of digital road models in the virtual testing of autonomous vehicles will be presented at the Autonomous Vehicle Test and Development Symposium, Stuttgart, 16th to 18th June. rFactorpro’s Digital Road Modelling pipeline, recently voted Development Tool of the Year by Vehicle Dynamics International magazine, is enabling vehicle manufacturers and Tier 1 suppliers to bring autonomous vehicles to the road sooner.

Microsemi will showcase 13 products from its RF, microwave and mm-wave ICs, modules, MMICs and subsystem portfolio at the 2015 IEEE MTT-S International Microwave Symposium (IMS2015) and Exhibition, to be held at the Phoenix Convention Centre, Arizona, 17thto 22ndMay 2015. Spanning DC to 140GHz, the devices suit defence, communications, instrumentation, industrial and aerospace applications.

From Hall 7, Stand 122 at PCIM, Power Electronic Measurements will be showing its full range of Rogowski technology based wide-bandwidth current probes. These include the CWT Ultra-mini with a 1.7mm thick coil small enough to fit between the legs of a TO-220 device, the CWT with coil lengths from 300mm to over 1m for measuring currents in applications as diverse as lightning strikes to leakage currents in machine shafts.

4th gen GaN on Si (Gallium Nitride on Silicon) technology, which delivers greater than 70% peak efficiency and 19dB gain for modulated signals at 2.7GHz, has been introduced by M/A-COM Technology Solutions (MACOM). This is similar to GaN on SiC technologies and more than 10% greater efficiency than LDMOS.

Enabling low Turn-On energy losses while offering flexible, modular designs in high frequency power converters,GeneSiC has introduced 20mW, 1200V SiC Junction Transistor-Diodes in an isolated, 4-leaded mini-module package. High frequency, high voltage, low R(ON)SiC Transistors and Rectifiers reduce the size, weight and volume of electronics applications requiring higher power handling at high operating frequencies.

The MAGX-000912-650L0x is a gold-metalised, matched gallium nitride on silicon carbide RF power transistor from MACOM, that is optimised for civilian and military pulsed avionics amplifier applications in the 960 MHz to 1215 MHz range, such as Mode-S, TCAS, JTIDS, DME and TACAN.

Cree has announced that it will exhibit, introduce a product, and speak at PCIM 2015, which will take place 19thto 21stMay 2015 in Nuremberg, Germany. Internationally recognised as a foremost power electronics conference and exhibition, PCIM addresses recent developments in power semiconductors, passive components, thermal management, energy storage, sensors, materials and systems.

Energy-savings has become essential in equipment’s design. Therefore, high efficiency of inverter and converter circuits used in power electronics, especially for power supply and motor drives requiring high-power conversion, has become indispensable. By Raimund Wagner, Rohm Semiconductor.

Yole Developpement has announced its power electronics market briefing,titled How are hybrid and electric going to reshape the overall power electronics industry?, whichwill take place on the 20th of May at PCIM Europe 2015.

A range of Gallium Nitride (GaN) on Silicon (Si) epi-wafers that meet industrial specifications for HEMT devices at 650V will be demonstrated by EpiGaN at PCIM Europe.The company will be situated at booth 6-432.