Search results for "transistor"
Transistor arrays deliver 40% power savings
Eleven products have been added toToshiba Electronics Europe's line-up of new-generation transistor arrays equipped with DMOS FET outputs, capable of delivering high-voltage, large-current drive up to 50V/0.5A. The new devices expand the 37 products that are already part of the TBD62xxxA series, which have found wide application in areas including motors, relays, LEDs, and level shifters for control communication lines.
Transforming the IoT with alternative memristors
The internet of things is coming, that much we know. But still it won’t; not until we have components and chips that can handle the explosion of data that comes with IoT. In 2020, there will already be 50 billion industrial internet sensors in place all around us. A single autonomous device – a smart watch, a cleaning robot, or a driverless car – can produce gigabytes of data each day, whereas an airbus may have over 10 000 sens...
How to design a silicon quantum computer chip
Research teams all over the world are exploring different ways to design a working computing chip that can integrate quantum interactions. Now, UNSW engineers believe they have cracked the problem, reimagining the silicon microprocessors we know to create a complete design for a quantum computer chip that can be manufactured using mostly standard industry processes and components.
Duo develop low power and lightweight electronic displays
A second major commercialisation partnership has been announced by SmartKem to develop and mass produce commercial low power, lightweight and unbreakable electronic displays using its organic thin film transistor (OTFT) technology. The company has signed a Letter of Intent (LOI) with a display maker in Taiwan, just weeks after announcing a similar agreement with one of China’s leading OLED manufacturers.
State of the SiC MOSFET
It is highly unlikely that anyone reading this article is unfamiliar with the Insulated Gate Bipolar Transistor (IGBT). This disruptive power transistor, first commercialised in the early 1980s, has had an enormous positive impact on the power electronics industry, enabling innovative converter design, improved system efficiencies, and worldwide energy savings. Indeed, some estimates suggest the IGBT has helped forestall 75 trillion pounds of CO2...
IMS-based evaluation platform cuts power systems cost
The GSP65RxxHB-EVB insulated metal substrate (IMS)-based evaluation platform from GaN Systems is now being shipped by distributor Mouser Electronics. The IMS evaluation platform demonstrates an inexpensive way to improve heat transfer, increase power density, and reduce system cost of power systems in automotive, consumer, industrial, and server or data centre applications.
A comprehensive portfolio for your Industry 4.0 needs
Industry 4.0 was a term coined in 2011 at the Hannover Fair and refers to the fourth industrial revolution. Taking place as far back as the late 18th Century, the first industrial revolution related to the mechanisation of manufacturing. This led to electrification in the early part of the 20th Century (the second industrial revolution).
Ga-doped Ge source/drain contacts achieve low contact resistivity
At the International Electron Devices Meeting (IEDM), imec reported ultralow contact resistivity of 5x10-10Ωcm2 on Gallium (Ga)-doped p-Germanium (Ge) source/drain contacts. The low contact resistivity and high level of Ga activation were achieved after nanosecond laser activation (NLA) at low thermal budget. The results show that highly Ga-doped Ge-rich source/drain contacts provide a promising route for suppressing parasitic source/drain resi...
Heterogeneous sequential for advanced CMOS nodes
At the 2017 International Electron Devices Meeting (IEDM), imec, research and innovation hub in nano-electronics and digital technology, presented the first Power-Performance-Area-Cost (PPAC) analysis of different sequential 3D-integration variants using advanced 5nm and 3nm CMOS technology nodes.
Transistors target noise-sensitive applications
Based on the company’s proprietary 180nm XH018 mixed-signal CMOS technology, X-FAB has announced the expansion of its low-noise transistor portfolio. Three new transistors are now available: a 1.8V low-noise NMOS, a 3.3V low-noise NMOS and a 3.3V low-noise PMOS – all of which offer drastically reduced flicker noise compared to standard CMOS offerings.