Search results for "transistor"
2D Hall-effect speed and direction sensor ICs for magnetic encorders
The release of a new family of 2D Hall-Effect Latch ICs has been announced by Allegro MicroSystems, which feature both vertical and planar Hall elements.The APS12625 and APS12626 sensor ICs enable reduced system size and bill-of-materials (BOM) cost along with an increase in performance and flexibility due to 2D sensing. They were developed in accordance with ISO 26262 and qualified per AEC-Q100, making them suitable for automotive and other safe...
Dielectric boosts stability of organic thin-film transistors
A nanostructured gate dielectric may have addressed the most significant obstacle to expanding the use of organic semiconductors for thin-film transistors. The structure, composed of a fluoropolymer layer followed by a nanolaminate made from two metal oxide materials, serves as gate dielectric and simultaneously protects the organic semiconductor – which had previously been vulnerable to damage from the ambient environment – and enabl...
Happy 70th birthday to the transistor
This coming Saturday, 16 December, celebrates the 70th anniversary of the invention of the transistor. It was the result of research at Bell Labs, New Jersey, USA by William Shockley, John Bardeen and Walter Brattain and was first shown to the world a week later on 23 December 1947, writes Malcolm Penn, CEO of market research company Future Horizons.
Shaping the future of electronics design
Scientists at the University of Southampton have discovered a way of enhancing the capabilities of an emerging nanotechnology that could open the door to a new generation of electronics.In a study published in the journal Scientific Reports, researchers show how they have pushed the memristor – a simpler and smaller alternative to the transistor, with the capability of altering its resistance and storing multiple memory states – to a ...
Half-bridge reference design enables rapid prototyping
A universal half-bridge reference design has been announced by RECOM. It is a platform design that can be used to compare the real life performance of various high power IGBT, 1st/2nd generation SiC, GaN, MOSFET and Cascode switching technologies. As the gate driver and PCB layout is the same for every transistor type, users will be able to compare and contrast their real life switching performance and make informed choices about the right techno...
Constant-current LED drivers suitable for edge lighting
As a result of growing demand for smaller LED lighting installations that also provide high efficiency and ultra-low EMI, Diodes Incorporated has extended its BCR420U and BCR421U families of linear LED drivers to include the BCR420UFD and BCR421UFD devices in the ultra-low profile DFN2020 package, making them suitable for 12 and 24V LED edge-lighting applications.
MicroSmart FC6A Plus PLC introduced by IDEC
IDEC Corporation has announced the release of its MicroSmart FC6A Plus, a powerful PLC with up to 2,060 local I/O. With its expanded I/O capacity, the FC6A Plus can control and monitor the largest machines or entire small-scale manufacturing facilities, a capability seldom found in a micro PLC.
Race to accelerate development of silicon quantum chip
The worldwide race to create more, better and reliable quantum processors is progressing fast, as a team of TU Delft scientists led by Professor Vandersypen has realised yet again. In a neck-and-neck race with their competitors, they showed that quantum information of an electron spin can be transported to a photon, in a silicon quantum chip. This is important in order to connect quantum bits across the chip and allowing to scale up to large numb...
Power transistor meets radar, avionics demands
Availability and full design support capabilities for the 1011GN-1200V power transistor from Microsemi has been announced by Richardson RFPD. The 1011GN-1200V is an internally-matched, common source, class AB, GaN on SiC HEMT capable of providing over 18.5dB gain, 1200W of pulsed RF output power at 32µs, and 2% duty cycle pulse format across the 1030 to 1090MHz band.
Recovery rectifiers meet requirements of SMPS applications
The dualhigh powerSDUR60P60WT series of ultrafast rectifiersin a three-leaded TO-247AD (Pb-Free) package, is now being provided by SMC Diode Solutions.The robust parts are supplied in the common cathode configuration and notably feature a continuous forward current rating of 60A, a reverse voltage rating of 600V, and very low reverse leakage current losses.