Search results for "igbt"

Advanced Power Electronics has recently released a new family of high speed 600V discrete IGBTs for use in AC and DC motor control, home appliances (such as air conditioning, refrigerators, microwave ovens), UPS, solar inverters, and induction cookers. All AP20GT60 family IGBTs feature a collector/emitter voltage rating of 600V, a peak gate emitter voltage rating, VGE, of ±20V, and a very low saturation voltage.

Yole Développement has today announced the release of its Power Fabs Database. In this database, Yole Développement provides the most comprehensive information about worldwide manufacturers with production type, status and capacity. Also, it includes graphs and analysis of the power fab landscape.

In some cases, when developing new integrated devices designers use the initial data they obtain to provide feedback to the fab, requesting a tweak of some process parameter, the better to establish the particular device characteristic for which they are looking. Once the designer is satisfied the device is ready, he or she moves on to a much more detailed sample testing phase.

International Rectifier has today launched a new family of 600V insulated-gate bipolar transistors optimized for motor drive applications operating below 10kHz including compressors for refrigerators and air-conditioners. IR’s latest generation Gen7 F devices employ punch-through Trench technology to deliver higher power density and the ability to optimize conduction and switching losses for a specific frequency of operation.

Toshiba Electronics Europe (TEE) annonce un IGBT avec une diode de recouvrement intégrée, qui offre une tension de blocage de pointe de 1800 V. Référencé GT40WR21, cet IGBT sera parfait pour les designs de chauffage et de cuisson par induction ainsi que pour d'autres applications exigeant une commutation de hautes performances avec des topologies d'onduleurs à résonance.

STMicroelectronics has today announced that it will be unveiling innovations in silicon carbide devices at Solar Power International 2012 that enable systems producers to build ultra-efficient electronics for converting raw solar energy into grid-quality power. Featuring on the ST booth at SPI, the Company’s 1200V silicon carbide diodes replace ordinary silicon diodes in the DC-DC boost converter and DC-AC inverter that convert the photovolt...

Renesas has today revealed the release of three new super-junction metal-oxide-semiconductor field-effect-transistors featuring figure of merit: on-state resistance x gate change in a 600 V power semiconductor device suitable for high-speed motor drives, DC-DC converters, and DC-AC inverter applications.

Toshiba has announced an IGBT with an integrated reverse recovery diode that offers an industry-leading voltage rating of 1800V. The GT40WR21 will be ideal for induction heating and induction cooking designs and other applications demanding high-performance voltage resonator inverter switching.

The recent drive toward greater energy efficiency has created an increasing demand for better high power semiconductor devices such as diodes, FETs, IGBTs and others. New technologies hold the promise of higher performance, including lower ON-state losses, lower OFF-state leakage, faster switching, and reduced loss while switching.

Laird Technologies announced the release of its new Tpcm 580SP Series phase change material. The Tpcm 580SP Series is the latest phase change material (PCM) offered in Laird Technologies’ thermal interface material (TIM) product line. It is an exceptionally high-performance, screen printable or stencilable TIM with a thermal conductivity of 4.0 W/mK that provides an alternative to thermal grease.