Search results for "igbt"

Texas Instruments unveil the industry’s first 35-V, single-channel, output stage power management gate drivers for insulated-gate bipolar transistors and silicon carbide FETs. TI’s new UCC27531 and UCC27532 output stage gate drivers with split output provide the most efficient output drive capability, shortest propagation delay and increased system protection for isolated power designs, such as solar DC/AC inverters, uninterruptible power sup...

For today’s high-power industrial applications, designers have traditionally used discrete components for the IGBT drivers, resulting in higher overall design complexity and increased system costs. To help designers overcome this, Fairchild Semiconductor has launched the FOD8318 Smart Gate Driver Optocoupler with Active Miller Clamp. The device is an advanced 2.5A output current IGBT drive optocoupler capable of driving most 1200V / 150A IGBTs.

Keithley Instruments has enhanced its Automated Characterization Suite software to support its expanding family of high power semiconductor characterization solutions. The ACS package is optimized for automated wafer-level parameter test applications, including automated characterization, reliability analysis, and known good die testing.

Vishay Intertechnology reveal its technology line-up for the Applied Power Electronics Conference and Exposition 2013, taking place March 17-21 in Long Beach, Calif. In booth 113, Hall A, the company will be highlighting its latest industry-leading power MOSFET, passive component, diode, and power IC technologies for a wide range of applications.

IXYS have today introduced a new IGBT product line – 650V XPT Trench IGBTs. The current ratings of devices in the new product family range from 30A to 200A at a high temperature of 110C. With on-stage voltages as low as 1.7V, these new XPT devices are designed to minimize conduction and switching losses, especially in hard-switching applications.

Renesas Electronics today announced two new photocouplers PS9332L and PS9332L2, with an integrated insulated-gate bipolar transistor (IGBT) [Note 1] protection function, for applications such as industrial machinery and solar power systems.

ROHM recently announced that they have begun mass-production of 1200V/180A-rated SiC MOS modules for inverters/converters used for industrial equipment, photovoltaic power conditioners and the like. This new product is the first* module to incorporate a power semiconductor comprised of just an SiC MOSFET, increasing the rated current to 180A for broader applicability while contributing to lower power consumption and greater compactness.

During APEC 2013, March 17-21, 2013, in booth 209 at the Long Beach Convention Center, Long Beach, Calif., Fairchild Semiconductor, puts the focus on engineers, and invites visitors to share their design challenges with power experts to find solutions that support their overall success.

Toshiba Electronics Europe has announced a photocoupler* that will reduce PCB space and power consumption in IGBT and MOSFET designs that need galvanic isolation. Target applications include factory automation equipment, motor drives, digital home appliances and photovoltaic power micro-inverters.

While the global IC and microprocessor industry is shifting to large wafer sizes (300 and 450 mm) in the discrete power device sector 150 and 200 mm wafers are still the standard. With the recent introduction of 200 mm N-type silicon wafers the power device industry has started shifting from 150 mm wafers to 200 mm. Major drivers are cost efficiency and higher throughput.