Search results for "igbt"

Infineon Technologies has announced that it is the world market leader in power semiconductors for the twelfth consecutive time. After acquiring International Rectifier at the beginning of the year, Infineon's 19.2% market share now makes it the clear market leader. In comparison, both companies’ market share in 2013 summed up to approximately 17.5%, according to the results of a 2014 study by the US market research instituteIHS.

Claimed to be the industry’s fastest half-bridge gate driver for discrete power MOSFETs and IGBTs that operate up to 600V, the UCC27714 has been introduced by Texas Instruments. The device delivers 90ns propagation delay (40% lower than existing silicon solutions), tight control of the propagation delay with a maximum of 125ns and tight channel-to-channel delay matching of 20ns.

Toshiba Electronics Europe has expanded its line up of High Voltage Intelligent Power Devices (HV-IPD) with the addition of a motor driver IC in a compact surface mount package that is rated to 600V. The TPD4152F enables a square-wave speed control of small BLDC electric motors. It is aimed at applications including air conditioners, air purifiers, fans, ventilators and water heaters.

GaN Systems has announced that it will demonstrate its GS66540C 650V 100A high current GaN power transistor at ECCE’15, the IEEE Energy Conversion Congress & Expo in Montreal, from 20th to 24th September. GaN Systems is delighted to be showcasing its family of Island Technology GaN transistors, the broadest and most complete on the market, at this premier global event being hosted in its home country.

Weldability-Sif has launched the SifWeld MTS 400, an electronically controlled MIG/MAG/MMA industrial welding package featuring IGBT inverter technology. With clear digital displays, low-spatter, polarity reversal (for FCAW) and integral 4-roll wire feed system able to accommodate up to 15kg of wire spools, the unit is designed for use in heavy-duty fabrication applications such as structural steel and marine/shipyard tasks.

GaN Systems will be displaying its GS66540C 650V, 100A GaN power transistors for the first time at the 17th Conference on Power Electronics and Applications, EPE’15 - ECCE Europe. Hosted by CERN in Geneva from 8th to 10th September, the conference and exhibition bring together leading industry figures in power electronics and experts from research and academic institutions to share knowledge and display cutting-edge developments in power te...

According to the IGBT Technology & Market Trends report from Yole Développement, the market will be multiplied by 1.8 between 2014 and 2020, reaching $ 6.2bn in 2020. When first commercialised 30 years ago, IGBT devices had a voltage breakdown around 1,100V. Since then, power range has broadened to 400-6,500V, allowing IGBTs to be a part of all power electronics applications. IGBT market growth will not stop there; vehicle electrificat...

A line of IGBT power modules in industry standard E3 and SIMBUS F housings has been released by IXYS. The IGBTs feature the second generation XPT IGBTs, the X2PT IGBT technology, resulting in improved power switching performance with the high level of ruggedness that characterised the IXYS XPT and other IGBT products.

Weldability-Sif has launched the SifWeld MTS 300, an electronically controlled MIG/MAG/MMA industrial welding package featuring IGBT inverter technology.

SiC (Silicon Carbide) MOSFET modules with blocking voltages of 1,200V and RDSON values as low as 20mΩ, offer a real alternative to 1,200V Si IGBTs in motor drives. John Mookken and Julius Rice, Cree, explore the economics of using the more expensive SiC module with the performance gains and added complexities at the system level.