Search results for "SiC"

Infineon Technologies has expanded its easy-to-design EiceDRIVER X3 Compact (1ED31xx) and the highly flexible EiceDRIVER X3 Enhanced Analog (1ED34xx) and Digital (1ED38xx) gate driver families. Both families now offer variants with superior reinforced isolation for higher application safety and long operating life.

Pre-Switch has published performance data that shows that its 200kW (space vector modulated) CleanWave200 evaluation inverter exceeds 99.3% at 100kHz using only three discrete, low cost 35 mΩ SiC MOSFETs per switch location. This is expected to revolutionise EV and renewable energy designs.

Power semiconductors are the key to an energy-efficient world. New technologies such as silicon carbide (SiC) and gallium nitride (GaN) enable higher power efficiency, smaller form factors and lower weight. Silicon also plays a major role in many designs. Energy efficiency is the focus of the ‘Virtual Power Conference’, which will be available ‘live’ from May 4th to 6th, 2021.

Mouser Electronics is now stocking EiceDRIVER X3 enhanced isolated gate driver ICs from Infineon Technologies.

Here, Electronic Specifier takes a look at the top five power products released in May.

Murata has added to its expansive range of advanced power solutions, with a new series of surface mount DC/DC converters. Comprising nine different models, the lightweight units in the MGJ2 series each have a two watt power rating and are supplied in compact, low-profile form factor modules with 19.49x14.99x4.39mm dimensions.

Joining STMicroelectronics’ STGAP family of isolated gate drivers, theSTGAP2SiCSis optimised for safe control of silicon carbide (SiC) MOSFETs and operates from a high-voltage rail up to 1,200V. Capable of producing a gate-driving voltage up to 26V, the STGAP2SiCS has a raised Under-Voltage Lockout (UVLO) threshold of 15.5V to meet the turn-on requirements of SiC MOSFETs.

SweGaN hasannounced it is partnering withFerdinand-Braun-Institut (FBH)andUniversity of Bristolin a European Space Agency project 'Kassiopeia' that includes a focus on SweGaN’s QuanFINE GaN-on-SiC epitaxial materials to help boost the device efficiency for Ka band applications.

SweGaN AB has announced that it is partnering with Ferdinand-Braun-Institut (FBH) and the University of Bristol in a European Space Agency project ‘Kassiopeia’ that includes a focus on SweGaN’s QuanFINE GaN-on-SiC epitaxial materials to help boost the device efficiency for Ka band applications.

Boston Semi Equipment (BSE) has announced that it received repeat orders from automotive customers for multipleZeus gravity test handlersconfigured forMEMS pressureandhigh power ICtesting applications. Zeus handlers have an extremely wide and flexible range for MEMS pressure sensing test cells and offer the highest voltage levels available in a production handler for testing MOSFET, IGBT, gate drivers, GaN and SiC power semiconductors.