Search results for "SiC"

UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, has launched an innovative on-line tool which assists developers in selecting the correct FET for their designs.

PCIM 2021 Digital Days:Rohm Semiconductor has released the GMR320 and the PSR low-Ohmic resistors to provide accurate current protection even in high temperature applications

Infineon introduces the 600 V CoolGaN half bridge integrated power stage (IPS), the IGI60F1414A1L for low to medium power applications

Imec and AIXTRON have demonstrated epitaxial growth of gallium-nitride (GaN) buffer layers qualified for 1,200V applications on 200mm QST substrates, with a hard breakdown exceeding 1,800V. The manufacturability of 1,200V-qualified buffer layers opens doors to highest voltage GaN-based power applications such as electric cars, previously only with feasible silicon-carbide (SiC)-based technology.

Infineon Technologies has introduced a new automotive power module with CoolSiC MOSFET technology. At this year’s virtual PCIM trade show, Infineon will present the new HybridPACK Drive CoolSiC, a full-bridge module with 1,200V blocking voltage optimised for traction inverters in electric vehicles (EV).

CeramTec has announced that it is presenting its ceramiccooling solution for a power module for use in drive inverters ine-mobility for the first time at PCIM Europe. The trade fair for power electronics and intelligent drive technologies, which iscurrently taking place as a virtual event until 7th May, offers the ideal stage to showcase the increasing importance of ceramic materials in innovative drive concepts.

Maxim Integrated Products has announced that its software-configurable digital IO products helped enable a 50% size reduction for the microScan3 Core I/O LiDAR safety laser scanner from SICK AG, a leader in the design and manufacturing of industrial sensor-based solutions. Achieving this small design allows SICK to expand the versatility of the new nanoScan3 Safety Laser Scanner for machines and vehicles that require high performance but have min...

Availability and full design support capabilities for three new 120mΩ, 650V SiC MOSFETs from Wolfspeed, has been announced by Richardson RFPD.

A customised gallium nitride (GaN) test board for its dynamic PD1500A power device analyser / double-pulse tester has been released by Keysight Technologies.

Toshiba Electronics Europe has leveraged its technological expertise in wide bandgap(WBG) semiconductor processes to introduce a compact but effective MOSFET module. The new MG800FXF2YMS3 incorporates 3300V-rated dual-channelsilicon carbide (SiC)MOSFET devices that are capable of supporting 800A currents.