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Diamond-enhanced GaN transistors in heat management
In an exciting advancement in semiconductor technology, researchers at Osaka Metropolitan University have integrated gallium nitride (GaN) transistors with diamond substrates, addressing the increasing heat management challenges in miniaturised semiconductor devices.
CCPAK Power GaN FETs: industry-leading performance in a truly innovative package
As the pioneers of copper-clip packaging technology, Nexperia bring20 years’ expertise in high-quality, robust SMD packaging to itsGaN FET portfolio. Adopting proven technology, CCPAK gives industry-leading performance in an innovative package. The copper-clip, cascode designoptimizes thermal and electrical performance making them ideal to meet the demands of next-generation industrial and renewable energy applications.
Nexperia now offer GaN FETs in compact SMD packaging CCPAK
Nexperia has announced that its GaN FET devices, featuring next-gen high-voltage GaN HEMT technology in proprietary copper-clip CCPAK surface mount packaging, are now available to designers of industrial and renewable energy applications.
GaN on Sapphire devices suit digital power supplies
Taiwanese manufacturer Bruckewell is now also offering various GaN solutions for digital power supplies with QR (quasi resonant) and LLC topologies.
TI expands low-power GaN portfolio
Engineers can develop AC/DC solutions that are half the size and achieve more than 95% system efficiency, simplifying thermal design.
3-kW server PSU with GaN and C2000
Included in thisreference design demo is TI’s latest top-side cooled GaN devices from the LMG3522 family, which additionally include built-in protection and power management. To enable minimal deadtimes and advanced controls, the demoleverages TI C2000 microcontrollers and TI digital isolators.
Legrand integrates Innoscience GaN ICs in wall sockets
Innoscience Technology, dedicated to developing a worldwide energy ecosystem based on efficient, cost-effective gallium-nitride-on-silicon (GaN-on-Si) power solutions, has announced its collaboration with Legrand, a leading company in electrical and digital building infrastructures.
ROHM's newly developed gate driver IC enhances GaN device capabilities
ROHM revealed the BD2311NVX-LB, a gate driver IC engineered for GaN devices, capable of achieving gate drive speeds in the nanosecond range, which is crucial for high-speed GaN switching.
Another GaN expert, Tony Astley, joins QPT
QPT reports that it is rapidly growing its team of advisers with the addition of another GaN expert.
Power integrations releases ground-breaking 1250-Volt GaN switcher IC
Power Integrations released the world's highest-voltage, single-switch gallium-nitride (GaN) power supply IC, featuring a 1250-volt PowiGaN switch.