Search results for "gan"
RNCL launches anti-surge resistors for GaN power battery management
For GaN based battery management for consumer electronics and computer peripherals, the demand for high power and precision is escalating.
EPC phase 16 report: GaN reliability forecast
EPC announces the publication of itsPhase-16 Reliability Report, documenting continued work using test-to-fail methodology and adding specific guidelines for overvoltage specifications and improving thermo-mechanical reliability.
Navitas GaN and SiC to enable next-gen AI power deliver
Navitas Semiconductor, the pure-play, next-generation power semiconductor company and industry pioneer in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced their AI data centre technology roadmap for up to three times power increase to support similar exponential growth in AI power demands expected in just the next 12–18 months.
Wise-integration raises €15M for global GaN solutions
Wise-integration, a French pioneer in digital control of gallium nitride (GaN) and GaN ICs for power supplies, has announced financing of €15 million.
Analog Devices’ new LT8418 GaN driver
Analog Devices’ has introduced its new LT8418 GaN driver which enables robust and reliable control of GaN FETs.
GaN driver delivers robust control of GaN FETs
Analog Devices is offering a 100V half-bridge GaN driver that simplifies the implementation of GaN FETs, providing robust gate control, high frequency switching, and increased system efficiency.
First GaN FET with 1 mΩ on-resistance
EPC has launched the 100 V, 1 mOhm EPC2361. This is the lowest on-resistance GaN FET on the market offering double the power density compared to EPC’s prior-generation products.
Silanna launches single chip with ACF, PWM, GaN FET and more
Silanna Semiconductor, a power density specialist, has expanded its CO2 Smart Power Family of AC/DC and DC/DC converter technologies with the launch of an active clamp flyback (ACF) controller that integrates adaptive digital PWM control with ultra-high-voltage (UHV) components comprising a 700V primary GaN FET, X capacitor (X-Cap) discharge circuit, active clamp driver, and start-up regulator.
Innoscience at APEC 2024: new GaN ICs and datacentre tech
Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, is attending the upcoming IEEE Applied Power Electronics Conference and Exposition (APEC) 2024.
Cambridge GaN Devices’ unique 2D barcodes
Cambridge GaN Devices (CGD) is demonstrating its commitment to innovation with another industry first: the incorporation of an individual 2D barcode on a GaN IC, which can be read by a standard, commercial code reader.