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Analog Devices’ new LT8418 GaN driver
Analog Devices’ has introduced its new LT8418 GaN driver which enables robust and reliable control of GaN FETs.
GaN driver delivers robust control of GaN FETs
Analog Devices is offering a 100V half-bridge GaN driver that simplifies the implementation of GaN FETs, providing robust gate control, high frequency switching, and increased system efficiency.
First GaN FET with 1 mΩ on-resistance
EPC has launched the 100 V, 1 mOhm EPC2361. This is the lowest on-resistance GaN FET on the market offering double the power density compared to EPC’s prior-generation products.
Silanna launches single chip with ACF, PWM, GaN FET and more
Silanna Semiconductor, a power density specialist, has expanded its CO2 Smart Power Family of AC/DC and DC/DC converter technologies with the launch of an active clamp flyback (ACF) controller that integrates adaptive digital PWM control with ultra-high-voltage (UHV) components comprising a 700V primary GaN FET, X capacitor (X-Cap) discharge circuit, active clamp driver, and start-up regulator.
Innoscience at APEC 2024: new GaN ICs and datacentre tech
Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, is attending the upcoming IEEE Applied Power Electronics Conference and Exposition (APEC) 2024.
PC GaN FETs give benchmark power density and efficiency
EPC GaN FETs set new standards in power density and efficiency for DC/DC conversion, utilising drivers and controllers from Analog Devices (ADI) to streamline GaN design. This collaboration enhances efficiency, minimises cooling expenses, and supports the highest power density in computing, industrial, and consumer DC/DC converters. EPC has introduced several reference designs featuring its GaN FETs alongside ADI controlle...
Innoscience Launches 100V GaN IC for 48V/60V BMS
Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has launched a new 100V bi-directional member of the company’s VGaN IC family.
GaN Systems founder Girvan Patterson joins QPT as advisor
The second Co-founder of GaN Systems, Girvan Patterson, has joined his fellow Co-founder, Geoff Haynes, as an Advisor at QPT. Patterson was CEO at GaN Systems Inc (now part of Infineon) for over eight years and has been the founder of three major start-ups and seven IPOs and M&A transactions.
Duo collaborate to speed GaN takeup in EVs
GaN Systems has partnered with ACEpower, a Chinese power supply, EV charging module, and OBC (Onboard Charger) product design and manufacturer, to expedite the widespread adoption of GaN technology in electric vehicles.
GaN FETs enable 75-231A laser diode control in nanoseconds
EPC has unveiled three new evaluation boards – EPC9179, EPC9181, and EPC9180 – featuring 75, 125, and 231A pulse current laser drivers, respectively.