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EPC GaN FETs set new standards in power density and efficiency for DC/DC conversion, utilising drivers and controllers from Analog Devices (ADI) to streamline GaN design. This collaboration enhances efficiency, minimises cooling expenses, and supports the highest power density in computing, industrial, and consumer DC/DC converters. EPC has introduced several reference designs featuring its GaN FETs alongside ADI controlle...

Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has launched a new 100V bi-directional member of the company’s VGaN IC family.

The second Co-founder of GaN Systems, Girvan Patterson, has joined his fellow Co-founder, Geoff Haynes, as an Advisor at QPT. Patterson was CEO at GaN Systems Inc (now part of Infineon) for over eight years and has been the founder of three major start-ups and seven IPOs and M&A transactions.

EPC has unveiled three new evaluation boards – EPC9179, EPC9181, and EPC9180 – featuring 75, 125, and 231A pulse current laser drivers, respectively.

In an exciting advancement in semiconductor technology, researchers at Osaka Metropolitan University have integrated gallium nitride (GaN) transistors with diamond substrates, addressing the increasing heat management challenges in miniaturised semiconductor devices.

GaN Systems has partnered with ACEpower, a Chinese power supply, EV charging module, and OBC (Onboard Charger) product design and manufacturer, to expedite the widespread adoption of GaN technology in electric vehicles.

As the pioneers of copper-clip packaging technology, Nexperia bring20 years’ expertise in high-quality, robust SMD packaging to itsGaN FET portfolio. Adopting proven technology, CCPAK gives industry-leading performance in an innovative package. The copper-clip, cascode designoptimizes thermal and electrical performance making them ideal to meet the demands of next-generation industrial and renewable energy applications.

Nexperia has announced that its GaN FET devices, featuring next-gen high-voltage GaN HEMT technology in proprietary copper-clip CCPAK surface mount packaging, are now available to designers of industrial and renewable energy applications.

Taiwanese manufacturer Bruckewell is now also offering various GaN solutions for digital power supplies with QR (quasi resonant) and LLC topologies.

Engineers can develop AC/DC solutions that are half the size and achieve more than 95% system efficiency, simplifying thermal design.