Search results for "d2pak"
SiC FETs offer silicon substitution to cut losses in power systems
Manufacturer of Silicon Carbide (SiC) power semiconductors,UnitedSiC has announced the UJ3C series of 650V SiC FETs as drop-in replacements for silicon Superjunction MOSFETs. Available in standard TO-220, TO-247 and D2PAK-3L packages, they operate with standard Si-MOSFET gate drive, eliminating the need to re-design drive circuits, while offering low RDS (ON) and low gate charge to reduce system losses.
Rectifiers save space, improve thermal performance
There are 13 200V and 600V FRED Pt Ultrafast recovery rectifiers in the eSMP series SlimDPAK (TO-252AE) package launched by Vishay Intertechnology. Each are available in Automotive Grade and commercial / industrial versions. Offering lower profiles and better thermal performance than devices in the DPAK (TO-252AA), the Vishay Semiconductors rectifiers deliver high power density and efficiency for automotive and telecom applications.
Robust MOSFETs suitable for automotive applications
Former Standard Products division of NXP, Nexperia, has announced a new series of Trench 9 power MOSFETs, targeted primarily at the automotive industry, which combine the company’s low voltage superjunction technology with its advanced packaging capability to deliver high performance and ruggedness.
Controller supports LLC-based power supply designs
ON Semiconductor has introduced an advanced synchronous rectifier (SR) controller optimised for LLC resonant converter topologies. The FAN6248 requires minimal additional components, delivers high efficiency, eases thermal management, improves overall system reliability, and simplifies the design of LLC power supplies.The FAN6248 is an ideal solution for modern, high-performance, power supply units (PSU) where high levels of reliability and effic...
900V MOSFETs enhance efficiency of flyback converters
Using the latest 900V MDmesh K5 super-junction MOSFETs from STMicroelectronics, power-supply designers can satisfy system demands for higher power and greater efficiency. According to the company, these MOSFETs deliver best-in-class on-resistance (RDS(ON)) and dynamic characteristics. A 900V breakdown voltage assures extra safety margin in systems with high bus voltages. The new series contains the first 900V MOSFETs with RDS(ON)below 100mΩ, an...
Power solutions head for APEC 2017 in Tampa
At APEC 2017 in Tampa, Florida (March 27-29), Richardson RFPD will highlight a wide range of innovative technologies from the world's leading suppliers of applied power electronics solutions. Featured on the company stand will be ADI drivers for wide bandgap technologies, featuring low propagation delay and cost/size reductions versus opto-coupler solutions, and Astrodyne EMI filters (single-phase, 3-phase, DC, COTs and custom designs) for virtua...
MOSFET achieves industry’s lowest figure-of-merit
Wolfspeed has expanded its innovative C3M platform through the introduction of a 1200V, 75mΩ MOSFET in its recently released low-inductance discrete packaging. The new device simplifies designs and enables an increase in frequency while maintaining efficiency, lowering system cost, reducing circuit EMI, and enabling 99% efficiency levels in three-phase power factor correction circuits.
SiC MOSFETs halve on-resistance
Third-generation SiC MOSFETs, the SCT3080KL 1200V models halve on-resistance as well as reduce input capacitance, without sacrificing form factor.
Power and energy management products on show at electronica
At the world’s leading show for electronics, electronica in Munich (8th-11thNovember 2016/Hall A5-Booth 542) ROHM Semiconductor is to showcase cutting-edge power management solutions for numerous applications in the automotive, industrial and residential/home arenas.
Automotive power MOSFETs expand with low resistance device
The family of automotive power MOSFETs from Toshiba Electronics Europe has expanded with the TK1R5R04PB - the first device in its low-resistance D2PAK+ package. While the D2PAK+ has the same footprint as a conventional D2PAK (or TO-263) package, it offers reduced package resistance. This is thanks to a source pin that is much wider near to the mould surface than that of a conventional D2PAK.