Search results for "d2pak"

Two super junction MOSFETs from Alpha and Omega Semiconductor, the 700V and 600V αMOS5 are available in surface mount DFN5x6 and DFN8x8 packages.

ON Semiconductor has expanded their range of wide bandgap (WBG) devices with the introduction of two additional families of SiC MOSFET. Intended for use in a variety of demanding high-growth applications including solar power inverters, on-board charging for electric vehicles (EV), uninterruptible power supplies (UPS), server power supplies, and EV charging stations, the new devices offer levels of performance that were simply not possible with s...

A Dutch solar car team from University of Twente and Saxion Hogeschool has selected silicon carbide (SiC) devices from UnitedSiC ahead of a major solar racing challenge in October. UnitedSiC provided product samples of their FAST Series of SiC FETs to Solar Team Twente, which they selected on the basis of superior performance.

UnitedSiC has added two new TO220-3L package options to its growing range of hard-switching UF3C FAST series of 650V SiC FETs. The new products offer RDS(on) values of 30mohms (UF3C065030T3S) and 80mohms (UF3C065080T3S). The three-leaded, industry-standard TO220-3L package features enhanced thermal characteristics made possible by a sintered-silver packaging technology.

This year’s PCIM Europe was attended by a record number of visitors, over 12,000. Over half (54%) were from outside Germany. They came to see over 500 exhibitors and while the subject matter was diverse and wide-ranging, there were some themes that emerged. GaN and SiC jostled for attention at this year’s PCIM Europe, writes Caroline Hayes, alongside current sensor developments designed to accelerate adoption rates for electric vehicl...

STMicroelectronics’ MDmesh DM6 600V MOSFETs contain a fast-recovery body diode to bring the performance advantages of the company’s latest super-junction technology to full- and half-bridge topologies, Zero-Voltage Switching (ZVS) phase-shift converters, and applications and topologies generally that need a robust diode to handle dynamic dV/dt.

Targeting energy-saving power topologies, STMicroelectronics’ MDmesh M6 series 600V super-junction transistors are engineered for high efficiency in medium-power resonant and hard-switching converter topologies. The threshold voltage optimised for soft switching makes the the new transistors suited for LLC resonant converters and boost-PFC converters in energy-conscious applications.

Nexperia has announced the release of the company’s lowest RDS(on) automotive-qualified MOSFETs. The AEC-Q101 Trench 9, 40V automotive superjunction MOSFETs in the rugged, electrically- and thermally-efficient LFPAK56E deliver a footprint reduction of up to 81% when compared to traditional solutions such as bare die modules, D2PAK or D2PAK-7 devices. The 0.9mΩ, 220ADC-rated BUK9J0R9-40H MOSFET suits applications up to 1.2kW, and is al...

At this year's PCIM in Nuremburg, Germany, ON Semiconductor has announced an expansion of its Silicon Carbide (SiC) Schottky diode portfolio to include devices intended for demanding automotive applications.

Infineon Technologies has expanded its product portfolio of the thin-wafer technology TRENCHSTOP5 IGBT. The new product family is offering up to 40A 650V IGBT, co-packed with a full rated 40A diode in a surface mounting TO-263-3 also known as D2PAK. The new TRENCHSTOP 5 IGBT in D2PAK package serves the growing demand for higher power density in power devices for automated surface mounted assembly.