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At the world’s leading show for electronics, electronica in Munich(Nov. 8-11, 2016/Hall A5-Booth 542)ROHM Semiconductor will showcase cutting-edge power management solutions for numerous applications in the automotive, industrial and residential/home arenas. Utilising the latest SiC and Si technologies, proprietary processing and packaging technologies, these devices maximise efficiency and compactness, paving the way for cost and component...

electronica, the world’s leading show for electronics, will see ROHM Semiconductor showcase its power management solutions for numerous applications in the automotive, industrial and residential/home arenas in Hall A5, Booth 542, in Munich 8th-11th November.

At PCIM Europe 2016, Rohm Semiconductor introduced its third generation SiC Schottky barrier diodes, whih it believes is the first of their kind rated at 650V at 6.0, 8.0 and 10A.

The line-up of automotive power MOSFETs from Toshiba Electronics has been expanded with the release of the new 40V N-ch housed in the low on-resistance TO-220SM(W) package. The TKR74F04PB is well suited for a variety of high power automotive applications, including DC-DC converters, EPS (Electric Power Steering) and load switches.

An AEC-Q101-qualified family of high-voltage N-channel power MOSFETs has been introduced by STMicroelectronics for automotive applications. The devices are built using ST’s state-of-the-art MDmesh DM2 super-junction technology with fast-recovery diode, feature a breakdown voltage over the 400-650V range and are housed in D2PAK, TO-220 and TO-247 packages.

A new 1700V SiC MOSFET from Wolfspeed is available from distributor Richardson RFPD with full design support capabilities. The C2M1000170J features high blocking voltage with low RDS(on), low parasitic inductance, ultra-low drain gate capacitance, and a separate driver source pin. It is easy to parallel and simple to drive.

Advances in MOSFET silicon and package technologies are critical to improving energy efficiency and reducing the heat generated during power conversion, says Georges Tchouangue, Toshiba Electronics Europe.

STMicroelectronics has extended its popularMDmesh M2 seriesof N-channel powerMOSFETswith a family of devices that offer the industry’s highest power efficiencies for servers, laptops, telecomms and consumer applications, especially under light-load conditions. With these devices, designers can create switching power conversion solutions that are lighter and more compact, while more easily meeting increasingly stringent energy-efficiency tar...

STMicroelectronics'M-series of 650V IGBTsoffers designers a fast and affordable way to increase the efficiency of HVAC motor drives, Uninterruptible Power Supplies, solar power converters, and all power-conversion applications working up to 20kHz in hard-switching circuit topologies.

Cree has introduced its latest breakthrough in SiC power device technology: the industry’s first 900V MOSFET platform. Optimised for high frequency power electronics applications, including renewable energy inverters, EV charging systems and three-phase industrial power supplies, the 900V platform enables smaller and higher efficiency next-gen power conversion systems at cost parity with silicon-based solutions.