Search results for "transistor"

GaNSystems hasannounced the release of two 650V half-bridge daughter cards (30A and 60A), which provide an ultra-versatile platform to evaluate GaN drivers and transistors. The evaluation cards are available in two power levels, up to 3kW (GS-EVB-HB-66508B-RN) and up to 6kW (GS-EVB-HB-66516T-RN) and include the RenesasRAA226110low-side GaN FET driver.

Ferroelectric Memory has announced that it has completed a $20 million Series B funding. The round of financing was led by the new investors M Ventures and imec.xpand, with participation of SK hynix, Robert Bosch Venture Capital, and TEL Venture Capital.

BrightLoop Converters has greatly reduced the size, cost and improved reliability of its latest BB SP DC/DC buck converters thanks to Efficient Power Conversion Corporation’s (EPC) EPC2029 enhancement-mode gallium nitride (eGaN) FET transistors.

GaN Systems hasannounced the winners of the sixth annual'GaN Systems Cup'China Power Supply Society (CPSS) design competitionat an awards ceremony at the CPSS Conference on 21stDecember, 2020.Thecompetition challenges top engineering teams from China’s universities to design new or improved power electronics systems using GaN power transistors. Six engineering teams were awarded for their GaN-based AC/DC converter designs.

Achieving ultrasmall dimensions (13nm fin width and 50nm gate length), and fabricated with a CMOS-compatible process flow in imec’s 300mm cleanroom, imec envisions volume manufacturing and integration into high-throughput, cost-effective detection tools, with 10,000s of these ‘BioFETs’ working in parallel.

Ampleon has announced the BLP2425M10S250P, a 250W RF power transistor for solid-state cooking and industrial, scientific and medical ISM applications in the 2400MHz to 2500MHz frequency band. Using Ampleon’s tenth-generation LDMOS process, BLP2425M10S250P operates with 67% drain efficiency, saving energy and simplifying the cooling requirements in high-power systems.

Microchip Technology has announced its newly-qualified 700 and 1200V SiC Schottky Barrier Diode (SBD) power devices, providing Electric Vehicle (EV) system designers with solutions that meet stringent automotive quality standards across a wide range of voltage, current and package options.

Efficient Power Conversion has advanced the performance capability of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2055 (3 mΩ, 40 V) eGaN FET. This device is suited for applications with demanding requirements for performance in space-constrained form factors including USB-C batter chargers and ultra-thin point-of-load (POL) converters.

Power Integrations has announced that shipments of the InnoSwitch ICs have surpassed one billion units. Launched in 2014, theInnoSwitchfamily was the first to incorporate Power Integrations’ innovative FluxLink communication technology, which provides highly accurate secondary-side control without the need for an optocoupler, resulting in exceptional energy efficiency, reliability and robustness.

UnitedSiC has announced four new Junction Barrier Schottky diodes to complement its FET and JFET transistor products. With good surge current performance, the UJ3D 1,200V and 1,700V devices are part of the company’s 3rd generation of SiC Merged-PiN-Schottky (MPS) diodes. Possessing a VF x Qc figure of merit (FoM), these SiC SB diodes are optimised for power system designs requiring elevated efficiency levels and ultra-fast switching speed.